参数资料
型号: IRGI4085PBF
厂商: International Rectifier
英文描述: PDP TRENCH IGBT
中文描述: 等离子沟道IGBT
文件页数: 3/7页
文件大小: 778K
代理商: IRGI4085PBF
www.irf.com
3
Fig 1. Typical Output Characteristics @ 25°C
Fig 3. Typical Output Characteristics @ 125°C
Fig 4. Typical Output Characteristics @ 150°C
Fig 2. Typical Output Characteristics @ 75°C
Fig 5. Typical Transfer Characteristics
Fig 6. V
CE(ON)
vs. Gate Voltage
5
10
15
20
VGE (V)
0
5
10
15
VC
TJ = 25°C
TJ = 150°C
IC = 25A
0
5
10
15
20
25
30
VCE (V)
0
100
200
300
400
500
600
IC
Top
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
Bottom
0
5
10
15
20
25
30
VCE (V)
0
100
200
300
400
500
600
IC
Top
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
Bottom
0
5
10
15
20
25
30
VCE (V)
0
100
200
300
400
IC
Top
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
Bottom
0
5
10
15
20
25
30
VCE (V)
0
100
200
300
400
IC
Top
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
Bottom
4
6
8
10
12
14
16
VGE, Gate-to-Emitter Voltage (V)
0
100
200
300
400
500
IC
TJ = 25°C
TJ = 150°C
相关PDF资料
PDF描述
IRGIB10B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGIB7B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGIH50F INSULATED GATE BIPOLAR TRANSISTOR
IRGP20B120UD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
相关代理商/技术参数
参数描述
IRGI4086PBF 功能描述:IGBT 晶体管 300V Plasma Display Panel RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube
IRGI4090PBF 功能描述:IGBT 晶体管 300V Plasma Display Panel Trench IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube
IRGIB10B60KD1 制造商:IRF 制造商全称:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGIB10B60KD1P 功能描述:IGBT 晶体管 600V Low-Vceon RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube
IRGIB10B60KD1PBF 制造商:IRF 制造商全称:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE