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参数资料
型号： IRGIB6B60KD
厂商： International Rectifier
英文描述： INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
中文描述： 绝缘栅双极型晶体管，超快软恢复二极管
文件页数： 2/12页
文件大小： 273K
代理商： IRGIB6B60KD
IRGIB6B60KD
2
www.irf.com
Vcc =80% (V
CES
), V
GE
= 20V, L =100μH, R
G
= 50
.
Energy losses include "tail" and diode reverse recovery.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
V
CE(on)
Collector-to-Emitter Voltage
Min.
600
—
1.50
—
—
3.5
—
—
—
—
—
—
—
—
—
Typ. Max. Units Conditions
—
—
V
0.30
—
V/°C V
GE
= 0V, I
C
= 1mA (25°C-150°C)
1.80
2.20
V
I
C
= 5A, V
GE
= 15V, T
J
= 25°C
2.20
2.50
I
C
= 5A, V
GE
= 15V, T
J
= 150°C
2.30
2.60
I
C
= 5A, V
GE
= 15V, T
J
= 175°C
4.5
5.5
V
V
CE
= V
GE
, I
C
= 250μA
-10
—
mV/°C V
CE
= V
GE
, I
C
= 1mA (25°C-150°C)
3.0
—
S
V
CE
= 50V, I
C
= 5.0A, PW = 80μs
1.0
150
μA
V
GE
= 0V, V
CE
= 600V
200
500
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
720
1100
V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
1.25
1.45
V
I
F
= 5.0A, V
GE
= 0V
1.20
1.40
I
F
= 5.0A, V
GE
= 0V, T
J
= 150°C
1.15
1.35
I
F
= 5.0A, V
GE
= 0V, T
J
= 175°C
—
±100
nA
V
GE
= ±20V, V
CE
= 0V
Ref.Fig.
V
GE
= 0V, I
C
= 500μA
5,6,7
9,10,11
V
GE(th)
V
GE(th)
/
T
J
gfe
I
CES
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Zero Gate Voltage Collector Current
9,10,11
12
V
FM
Diode Forward Voltage Drop
8
I
GES
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Total Gate Charge (turn-on)
Q
ge
Gate-to-Emitter Charge (turn-on)
Q
gc
Gate-to-Collector Charge (turn-on)
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
tot
Total Switching Loss
t
d(on)
Turn-On delay time
t
r
Rise time
t
d(off)
Turn-Off delay time
t
f
Fall time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
tot
Total Switching Loss
t
d(on)
Turn-On delay time
t
r
Rise time
t
d(off)
Turn-Off delay time
t
f
Fall time
L
E
Internal Emitter Inductance
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
RBSOA
Reverse Bias Safe Operating Area
Gate-to-Emitter Leakage Current
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
FULL SQUARE
Typ. Max. Units
18.2
27.3
1.9
2.85
9.2
13.8
110
210
135
245
245
455
25
34
17
26
215
230
13.2
22
150
260
190
300
340
560
28
37
17
26
240
255
18
27
7.5
—
290
435
34
51
10
15
Conditions
Ref.Fig.
I
C
= 5.0A
V
CC
= 400V
V
GE
= 15V
I
C
= 5.0A, V
CC
= 400V
μJ V
GE
= 15V, R
G
= 100
, L = 1.4mH
Ls= 150nH, T
J
= 25°C
I
C
= 5.0A, V
CC
= 400V
ns
V
GE
= 15V, R
G
= 100
, L = 1.4mH
Ls= 150nH, T
J
= 25°C
23
nC
CT1
CT4
CT4
I
C
= 5.0A, V
CC
= 400V
V
GE
= 15V, R
G
= 100
, L = 1.4mH
Ls= 150nH, T
J
= 150°C
I
C
= 5.0A, V
CC
= 400V
ns
V
GE
= 15V, R
G
= 100
, L = 1.4mH
Ls= 150nH, T
J
= 150°C
CT4
μJ
13,15
WF1,WF2
14,16
CT4
WF1
WF2
nH
Measured 5 mm from package
V
GE
= 0V
V
CC
= 30V
f = 1.0MHz
T
J
= 150°C, I
C
= 18A, Vp = 600V
V
CC
=500V,V
GE
= +15V to 0V,R
G
= 100
T
J
= 150°C, Vp = 600V, R
G
= 100
V
CC
=360V,V
GE
= +15V to 0V
pF
22
4
CT2
SCSOA
Short Circuit Safe Operating Area
10
—
—
μs
CT3
WF4
I
SC (PEAK)
E
rec
t
rr
I
rr
Q
rr
Peak Short Circuit Collector Current
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
Diode Reverse Recovery Charge
—
—
—
—
—
50
90
70
10
350
—
175
91
13
455
A
μJ
ns
A
nC
WF4
T
J
= 150°C
V
CC
= 400V, I
F
= 5.0A, L = 1.4mH
V
GE
= 15V, R
G
= 100
,
Ls= 150nH
di/dt = 400A/μs
17,18,19
20,21
CT4,WF3
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