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参数资料
| 型号： | IRGS30B60 |
| 厂商： | International Rectifier |
| 英文描述： | LCD Display Panel; No. of Digits/Alpha:320; Display Technology:LCD; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No RoHS Compliant: No |
| 中文描述： | 绝缘栅双极晶体管 |
| 文件页数： | 13/13页 |
| 文件大小： | 328K |
| 代理商： | IRGS30B60 |
IRGB/S/SL30B60K
www.irf.com
13
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
10/03
Data and specifications subject to change without notice.
TO-220AB package is not recommended for Surface Mount Application.
Notes:
V
CC
= 80% (V
CES
), V
GE
= 15V, L = 28μH, R
G
= 22
.
This is only applied to TO-220AB package.
This is applied to D
2
Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Energy losses include "tail" and diode reverse recovery.
Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A.
Dimensions are shown in millimeters (inches)
TRR
3
4
4
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449)
15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
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|---|---|
| IRGS30B60K | 制造商:IRF 制造商全称:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR |
| IRGS30B60KPBF | 功能描述:IGBT 晶体管 600V ULTRAFAST 10-30 KHZ IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IRGS30B60KPBF | 制造商:International Rectifier 功能描述:TRANSISTOR |
| IRGS30B60KTRRP | 功能描述:IGBT 模块 600V 30AD2PAK RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装: |
| IRGS4045DPBF | 功能描述:IGBT 晶体管 IR IGBT 600V 6A, COPAK-D2PAK RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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