参数资料
型号: IRGS30B60
厂商: International Rectifier
英文描述: LCD Display Panel; No. of Digits/Alpha:320; Display Technology:LCD; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No RoHS Compliant: No
中文描述: 绝缘栅双极晶体管
文件页数: 5/13页
文件大小: 328K
代理商: IRGS30B60
IRGB/S/SL30B60K
www.irf.com
5
Fig. 11
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 10μs
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= 150°C
Fig. 9
- Typical V
CE
vs. V
GE
T
J
= 25°C
Fig. 8
- Typical V
CE
vs. V
GE
T
J
= -40°C
5
10
15
20
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VC
ICE = 15A
ICE = 30A
ICE = 60A
5
10
15
20
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VC
ICE = 15A
ICE = 30A
ICE = 60A
5
10
15
20
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
VC
ICE = 15A
ICE = 30A
ICE = 60A
0
5
10
15
20
VGE (V)
0
50
100
150
200
250
IC
TJ = 25°C
TJ = 150°C
TJ = 150°C
TJ = 25°C
相关PDF资料
PDF描述
IRGB4045DPBF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGB4055PBF Advanced Trench IGBT Technology
IRGB4059DPBF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGB4064DPBF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGB440U INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=22A)
相关代理商/技术参数
参数描述
IRGS30B60K 制造商:IRF 制造商全称:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR
IRGS30B60KPBF 功能描述:IGBT 晶体管 600V ULTRAFAST 10-30 KHZ IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube
IRGS30B60KPBF 制造商:International Rectifier 功能描述:TRANSISTOR
IRGS30B60KTRRP 功能描述:IGBT 模块 600V 30AD2PAK RoHS:否 制造商:Infineon Technologies 产品:IGBT Silicon Modules 配置:Dual 集电极—发射极最大电压 VCEO:600 V 集电极—射极饱和电压:1.95 V 在25 C的连续集电极电流:230 A 栅极—射极漏泄电流:400 nA 功率耗散:445 W 最大工作温度:+ 125 C 封装 / 箱体:34MM 封装:
IRGS4045DPBF 功能描述:IGBT 晶体管 IR IGBT 600V 6A, COPAK-D2PAK RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube