参数资料
型号: IRGSL30B60K
厂商: International Rectifier
英文描述: INSULATED GATE BIPOLAR TRANSISTOR
中文描述: 绝缘栅双极晶体管
文件页数: 12/13页
文件大小: 328K
代理商: IRGSL30B60K
IRGB/S/SL30B60K
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
12
www.irf.com
TO-262 Part Marking Information
EXAMPLE: THIS IS AN IRL3103L
LOT CODE 1789
ASSEMBLED ON WW 19, 1997
IN THE ASSEMBLY LINE "C"
ASSEMBLY
LOT CODE
PART NUMBER
DATE CODE
YEAR 7 = 1997
WEEK 19
LINE C
LOGO
RECTIFIER
INTERNATIONAL
IGBT
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
相关PDF资料
PDF描述
IRGS30B60 LCD Display Panel; No. of Digits/Alpha:320; Display Technology:LCD; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No RoHS Compliant: No
IRGB4045DPBF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGB4055PBF Advanced Trench IGBT Technology
IRGB4059DPBF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGB4064DPBF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
相关代理商/技术参数
参数描述
IRGSL30B60KPBF 功能描述:IGBT 晶体管 600V UltraFast 10-30kHz IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube
IRGSL4062DPBF 功能描述:IGBT 晶体管 600V Low VCEon RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube
IRGSL4B60K 制造商:IRF 制造商全称:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR
IRGSL4B60KD1 制造商:IRF 制造商全称:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR WITH
IRGSL4B60KD1PBF 功能描述:IGBT 晶体管 600V Low-Vceon Non Punch Through RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube