参数资料
型号: IRGSL6B60K
厂商: International Rectifier
英文描述: INSULATED GATE BIPOLAR TRANSISTOR
中文描述: 绝缘栅双极晶体管
文件页数: 12/13页
文件大小: 245K
代理商: IRGSL6B60K
IRG/B/S/SL6B60K
12
www.irf.com
TO-262 Part Marking Informa-
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
ASSEMBLY
LOT CODE
RECTIFIER
LOGO
INTERNATIONAL
ASSEMBLED ON WW 19, 1997
IN THE ASSEMBLY LINE "C"
Note: "P" in assembly line
position indicates "Lead-Free"
THIS IS AN IRL3103L
LOT CODE 1789
EXAMPLE:
LINE C
DATE CODE
YEAR 7 = 1997
WEEK 19
PART NUMBER
PART NUMBER
LOGO
LOT CODE
ASSEMBLY
INTERNATIONAL
RECTIFIER
PRODUCT (OPTIONAL)
YEAR 7 = 1997
P = DESIGNATES LEAD-FREE
A = ASSEMBLY SITE CODE
WEEK 19
DATE CODE
OR
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IRGSL6B60KD 制造商:IRF 制造商全称:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGSL6B60KDPBF 功能描述:IGBT 晶体管 600V UltraFast 10-30kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube
IRGSL6B60KPBF 功能描述:IGBT N-CH 600V 13A TO-262 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:- 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿(最大):1200V Vge, Ic时的最大Vce(开):3V @ 15V,100A 电流 - 集电极 (Ic)(最大):200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件
IRGSL8B60K 制造商:IRF 制造商全称:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR
IRGSL8B60KPBF 制造商:IRF 制造商全称:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR