- 您现在的位置：买卖IC网 > PDF目录384501 > IRGSL6B60K (International Rectifier) INSULATED GATE BIPOLAR TRANSISTOR PDF资料下载
参数资料
| 型号： | IRGSL6B60K |
| 厂商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR |
| 中文描述： | 绝缘栅双极晶体管 |
| 文件页数： | 13/13页 |
| 文件大小： | 245K |
| 代理商： | IRGSL6B60K |
IRG/B/S/SL6B60K
www.irf.com
13
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
08/04
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial
market.
Qualification Standards can be found on IR’s Web site.
Notes:
V
CC
= 80% (V
CES
), V
GE
=20V, L = 100μH, R
G
= 100
This is only applied to TO-220AB package
This is applied to D
2
Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Energy losses include "tail" and diode reverse recovery, using Diode HF03D060ACE.
TO-220 package is not recommended for Surface Mount Application
Dimensions are shown in millimeters (inches)
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
1.75 (.069)
1.25 (.049)
11.60 (.457)
15.42 (.609)
15.22 (.601)
4.72 (.136)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
相关PDF资料 |
PDF描述 |
|---|---|
| IRGBC40S | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=31A) |
| IRGBF20 | INSULATED GATE BIPOLAR TRANSISTOR(Vce=900V, @Vge=15V, Ic=5.3A) |
| IRGBF20F | Aluminum Polymer SMT Capacitor; Capacitance: 470uF; Voltage: 6.3V; Case Size: 10x10 mm; Packaging: Tape & Reel |
| IRGI4055PBF | PDP TRENCH IGBT |
| IRGI4061DPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRGSL6B60KD | 制造商:IRF 制造商全称:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| IRGSL6B60KDPBF | 功能描述:IGBT 晶体管 600V UltraFast 10-30kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IRGSL6B60KPBF | 功能描述:IGBT N-CH 600V 13A TO-262 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:- 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| IRGSL8B60K | 制造商:IRF 制造商全称:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR |
| IRGSL8B60KPBF | 制造商:IRF 制造商全称:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR |
发布紧急采购，3分钟左右您将得到回复。