参数资料
型号: IRHNA593160PBF
元件分类: JFETs
英文描述: 52 A, 100 V, 0.049 ohm, P-CHANNEL, Si, POWER, MOSFET
封装: HERMETIC SEALED, CERAMIC, SMD-2, 3 PIN
文件页数: 1/8页
文件大小: 179K
代理商: IRHNA593160PBF
Absolute Maximum Ratings
Parameter
Units
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
-47
ID @ VGS = -12V, TC =100°C Continuous Drain Current
-30
IDM
Pulsed Drain Current
-188
PD @ TC = 25°C
Max. Power Dissipation
250
W
Linear Derating Factor
2.0
W/°C
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy
400
mJ
IAR
Avalanche Current
-47
A
EAR
Repetitive Avalanche Energy
25
mJ
dv/dt
Peak Diode Recovery dv/dt
-10
V/ns
TJ
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Pckg. Mounting Surface Temp.
300 (for 5s)
Weight
3.3 (Typical)
g
Pre-Irradiation
International Rectifier’s R5TM technology provides high
performance power MOSFETs for space applications.
These devices have been characterized for Single Event
Effects (SEE) with useful performance up to an LET of
80 (MeV/(mg/cm2)). The combination of low RDS(on) and
low gate charge reduces the power losses in switching
applications such as DC to DC converters and motor
control. These devices retain all of the well established
advantages of MOSFETs such as voltage control, fast
switching, ease of paralleling and temperature stability
of electrical parameters.
°C
A
02/15/07
www.irf.com
1
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Surface Mount
n Ceramic Package
n Light Weight
For footnotes refer to the last page
SMD-2
Product Summary
Part Number
Radiation Level Rds(on)
ID
IRHNA597160 100K Rads (Si)
0.049
-47A
IRHNA593160 300K Rads (Si)
0.049
-47A
TECHNOLOGY
55
RADIATION HARDENED
IRHNA597160
POWER MOSFET
100V, P-CHANNEL
SURFACE MOUNT (SMD-2)
PD-94493B
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