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参数资料
| 型号： | IRHNA593160PBF |
| 元件分类： | JFETs |
| 英文描述： | 52 A, 100 V, 0.049 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | HERMETIC SEALED, CERAMIC, SMD-2, 3 PIN |
| 文件页数： | 5/8页 |
| 文件大小： | 179K |
| 代理商： | IRHNA593160PBF |
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5
Pre-Irradiation
IRHNA597160
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
1000
0.0
1.5
3.0
4.5
6.0
-V
,Source-to-Drain Voltage (V)
-I
,R
everse
D
rai
nC
urrent
(A
)
SD
V
= 0 V
GS
T = 25 C
J
°
T = 150 C
J
°
1
10
100
0
2000
4000
6000
8000
10000
-V
, Drain-to-Source Voltage (V)
C,
Capacitance
(pF)
DS
V
C
=
0V,
C
f = 1MHz
+ C
C
SHORTED
GS
iss
gs
gd ,
ds
rss
gd
oss
ds
gd
Ciss
Coss
Crss
0
40
80
120
160
200
240
0
4
8
12
16
20
Q , Total Gate Charge (nC)
-V
,Gate-to-Source
Voltage
(V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
-52A
V
=-20V
DS
V
=-50V
DS
V
=-80V
DS
-47A
1
10
100
1000
-VDS , Drain-toSource Voltage (V)
1
10
100
1000
-I
D
,
D
ra
in
-t
o-
S
ou
rc
e
C
ur
re
nt
(A
)
Tc = 25°C
Tj = 150°C
Single Pulse
1ms
10ms
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100s
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRHNA593160SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHNA593160SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHNA593260 | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
| IRHNA593260SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHNA593260SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
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