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参数资料
| 型号： | IRHNA593160PBF |
| 元件分类： | JFETs |
| 英文描述： | 52 A, 100 V, 0.049 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | HERMETIC SEALED, CERAMIC, SMD-2, 3 PIN |
| 文件页数： | 8/8页 |
| 文件大小： | 179K |
| 代理商： | IRHNA593160PBF |
IRHNA597160
Pre-Irradiation
8
www.irf.com
Pulse width ≤ 300 s; Duty Cycle ≤ 2%
Total Dose Irradiation with VGS Bias.
-12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Total Dose Irradiation with VDS Bias.
-80 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = -50V, starting TJ = 25°C, L=0.36 mH
Peak IL = -47A, VGS = -12V
ISD ≤ -47A, di/dt ≤ - 450A/s,
VDD ≤ -100V, TJ ≤ 150°C
Footnotes:
Case Outline and Dimensions — SMD-2
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 02/2007
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