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参数资料
| 型号： | IRHNA7Z60 |
| 厂商： | International Rectifier |
| 英文描述： | 30Volt, 0.009Ω, RAD HARD HEXFET(30V, 0.009Ω,抗辐射N沟道HEXFET晶体管) |
| 中文描述： | 30Volt，0.009Ω，RAD数据通信硬的HEXFET（30V的，0.009Ω，抗辐射?沟道的HEXFET晶体管） |
| 文件页数： | 4/8页 |
| 文件大小： | 127K |
| 代理商： | IRHNA7Z60 |
IRHNA7Z60, IRHNA8Z60 Devices
Pre-Irradiation
4
www.irf.com
Fig 4.
Normalized On-Resistance
Vs. Temperature
Fig 2.
Typical Output Characteristics
Fig 1.
Typical Output Characteristics
Fig 3.
Typical Transfer Characteristics
10
100
1000
0.1
1
10
100
20μs PULSE WIDTH
T = 25 C
TOP
BOTTOM
VGS
V , Drain-to-Source Voltage (V)
I
D
5.0V
10
100
1000
0.1
1
10
100
20μs PULSE WIDTH
T = 150 C
TOP
BOTTOM
VGS
8.0V
6.0V
V , Drain-to-Source Voltage (V)
I
D
5.0V
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature( C)
R
(
D
V
=
I =
GS
10V
75A
10
100
1000
5
6
V , Gate-to-Source Voltage (V)
7
8
9
10
11
12
VDS
20μs PULSE WIDTH
I
D
T = 25 C
T = 150 C
°
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