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参数资料
| 型号： | IRHNA7Z60 |
| 厂商： | International Rectifier |
| 英文描述： | 30Volt, 0.009Ω, RAD HARD HEXFET(30V, 0.009Ω,抗辐射N沟道HEXFET晶体管) |
| 中文描述： | 30Volt，0.009Ω，RAD数据通信硬的HEXFET（30V的，0.009Ω，抗辐射?沟道的HEXFET晶体管） |
| 文件页数： | 7/8页 |
| 文件大小： | 127K |
| 代理商： | IRHNA7Z60 |
IRHNA7Z60, IRHNA8Z60 Devices
www.irf.com
7
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3
μ
F
50K
.2
μ
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
12 V
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
Fig 12b.
Unclamped Inductive Waveforms
Fig 12a.
Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
12V
25
50
75
100
125
150
0
300
600
900
1200
1500
Starting T , Junction Temperature( C)
E
ID
34A
47A
75A
TOP
BOTTOM
Pre-Irradiation
相关PDF资料 |
PDF描述 |
|---|---|
| IRHNA8Z60 | 30Volt, 0.009Ω, RAD HARD HEXFET(30V, 0.009Ω,抗辐射N沟道HEXFET晶体管) |
| IRHNA9260 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) |
| IRHNA93260 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) |
| IRHNB7260 | 200Volt,0.070Ω, N-Channel MEGA RAD HARD HEXFET(200V,0.070Ω,MEGA 抗辐射N沟道HEXFET晶体管) |
| IRHNB8260 | 200Volt,0.070Ω, N-Channel MEGA RAD HARD HEXFET(200V,0.070Ω,MEGA 抗辐射N沟道HEXFET晶体管) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRHNA7Z60SCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHNA7Z60SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHNA8064 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHNA8160 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHNA8260 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
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