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参数资料
| 型号： | IRHNB8Z60 |
| 厂商： | International Rectifier |
| 英文描述： | 30Volt,0.009Ω,MEGA RAD HARD HEXFET(30V,0.009Ω,MEGA 抗辐射N沟道HEXFET晶体管) |
| 中文描述： | 30Volt，0.009Ω，美佳RAD数据通信硬的HEXFET（30V的，0.009Ω，美佳抗辐射?沟道的HEXFET晶体管） |
| 文件页数： | 2/8页 |
| 文件大小： | 112K |
| 代理商： | IRHNB8Z60 |
IRHNB7Z60, IRHNB8Z60 Devices
Pre-Irradiation
2
www.irf.com
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
BVDSS/
TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
30
—
Typ
—
0.023
Max Units
—
—
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
BVDSS
V
V/°C
—
—
0.009
VGS = 12V, ID =75A
2.0
31
—
—
—
—
—
—
4.0
—
25
250
V
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 75A
VDS= 0.8 x Max Rating,VGS=0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 75A
VDS = Max Rating x 0.5
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.8
100
-100
421
104
74
32
370
150
280
—
nC
VDD = 15V, ID = 75A,
RG = 2.35
LS
Internal Source Inductance
—
2.8
—
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
7000
4800
1800
—
—
—
VGS = 0V, VDS = 25V
f = 1.0MHz
pF
nA
nH
ns
μ
A
* Current is limited by internal wire diameter
Thermal Resistance
Parameter
RthJC
Junction-to-Case
RthJ-PCB
Junction-to-PC board
Min Typ Max
—
—
—
1.6
Units
Test Conditions
0.42
—
soldered to a 2” square copper-clad board
K/W
Measured from drain
lead, 6mm (0.25 in)
from package to center
of die.
Measured from source
lead, 6mm (0.25 in)
from package to
source bonding pad.
Modified MOSFET sym-
inductances.
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
Min Typ
—
—
Max Units
75*
300
Test Conditions
—
—
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.8
245
1.1
V
ns
μ
C
T
j
= 25°C, IS = 75A, VGS = 0V
Tj = 25°C, IF = 75A, di/dt
≤
100A/
μ
s
VDD
≤
50V
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Modified MOSFET symbol
showing the integral reverse
p-n junction rectifier.
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