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| 型号： | IRHNB8Z60 |
| 厂商： | International Rectifier |
| 英文描述： | 30Volt,0.009Ω,MEGA RAD HARD HEXFET(30V,0.009Ω,MEGA 抗辐射N沟道HEXFET晶体管) |
| 中文描述： | 30Volt，0.009Ω，美佳RAD数据通信硬的HEXFET（30V的，0.009Ω，美佳抗辐射?沟道的HEXFET晶体管） |
| 文件页数： | 3/8页 |
| 文件大小： | 112K |
| 代理商： | IRHNB8Z60 |
IRHNB7Z60, IRHNB8Z60 Devices
Pre-Irradiation
www.irf.com
3
Radiation Performance of Rad Hard HEXFETs
International Rectifier Radiation Hardened HEXFETs
are tested to verify their hardness capability. The hard-
ness assurance program at International Rectifier
comprises three radiation environments.
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test
method 1019 condition A. International Rectifier has
imposed a standard gate condition of 12 volts per
note 6 and a V
DS
bias condition equal to 80% of the
device rated voltage per note 7. Pre- and post-irra-
diation limits of the devices irradiated to 1 x 10
5
Rads
(Si) are identical and are presented in Table 1, col-
umn 1, IRHNB7Z60. Post-irradiation limits of the de-
vices irradiated to 1 x 10
6
Rads (Si) are presented in
Table 1. Low Dose Rate
Parameter
IRHNB7Z60 IRHNB8Z60
100K Rads (Si) 1000K Rads (Si)
Units
Min
Max
Min
30
—
30
2.0
4.0
1.25
—
100
—
—
-100
—
—
25
—
—
0.009
—
Test Conditions
Max
—
4.5
100
-100
50
0.03
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)1
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance One
Diode Forward Voltage
V
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20 V
V
DS
=0.8 x Max Rating, V
GS
=0V
V
GS
= 12V, I
D
=15A
nA
μA
V
SD
—
1.8
—
1.8
V
TC = 25°C, IS = 15A,V
GS
= 0V
Table 1, column 2, IRHNB8Z60.The values in Table
1 will be met for either of the two low dose rate test
circuits that are used. Both pre- and post-irradiation
performance are tested and specified using the same
drive circuitry and test conditions in order to provide
a direct comparison.
High dose rate testing may be done on a special
request basis using a dose rate up to 1 x 10
12
Rads
(Si)/Sec (See Table 2).
International Rectifier radiation hardened HEXFETs
have been characterized in heavy ion Single Event
Effects (SEE) environments. Single Event Effects char-
acterization is shown in Table 3.
Radiation Characteristics
Table 2. High Dose Rate
10
11
Rads (Si)/sec 10
12
Rads (Si)/sec
Min Typ Max
—
—
24
Parameter
Drain-to-Source Voltage
Min Typ Max
Units
—
—
Test Conditions
V
DSS
24
V
Applied drain-to-source voltage during
gamma-dot
Peak radiation induced photo-current
A/μsec Rate of rise of photo-current
μH
Circuit inductance required to limit di/dt
IPP
di/dt
L1
—
—
0.1
140
800
—
—
—
—
—
—
0.8
140
160
—
—
—
—
A
Table 3. Single Event Effects
LET (Si)
Fluence Range V
DS
Bias V
GS
Bias
Ion
(MeV/mg/cm
2
) (ions/cm
2
) (μm) (V) (V)
Cu 28
3x 10
5
~43 26
-5
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