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参数资料
| 型号： | IRHNB8Z60 |
| 厂商： | International Rectifier |
| 英文描述： | 30Volt,0.009Ω,MEGA RAD HARD HEXFET(30V,0.009Ω,MEGA 抗辐射N沟道HEXFET晶体管) |
| 中文描述： | 30Volt，0.009Ω，美佳RAD数据通信硬的HEXFET（30V的，0.009Ω，美佳抗辐射?沟道的HEXFET晶体管） |
| 文件页数： | 8/8页 |
| 文件大小： | 112K |
| 代理商： | IRHNB8Z60 |
IRHNB7Z60, IRHNB8Z60 Devices
Pre-Irradiation
8
www.irf.com
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS:
Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA:
7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY:
Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST:
K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA:
315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
7/98
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Total Dose Irradiation with VDS Bias.
VDS = 0.8 rated BVDSS (pre-irradiation)
applied and VGS = 0 during irradiation per
MlL-STD-750, method 1019, condition A.
This test is performed using a flash x-ray
source operated in the e-beam mode (energy
~2.5 MeV), 30 nsec pulse.
All Pre-Irradiation and Post-Irradiation test
conditions are
identical
to facilitate direct
comparison for circuit applications.
Repetitive Rating; Pulse width limited by
maximum junction temperature.
Refer to current HEXFET reliability report.
VDD = 25V, starting TJ = 25
°
C, EAS = [0.5 * L * (IL
Peak IL = 75A, VGS = 12V
ISD
≤
75A, di/dt
≤
94A/
μ
s,
VDD
≤
BVDSS, TJ
≤
150
°
C
Suggested RG = 0
Pulse width
≤
300
μ
s; Duty Cycle
≤
2%
K/W =
°
C/W
W/K = W/
°
C
2
)]
Case Outline and Dimensions — SMD-3
SMD-3
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