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参数资料
| 型号： | IRHNJ3230 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9.4A I(D) | SMT |
| 中文描述： | 晶体管| MOSFET的| N沟道| 200伏五（巴西）直| 9.4AI（四）|贴片 |
| 文件页数： | 5/8页 |
| 文件大小： | 120K |
| 代理商： | IRHNJ3230 |
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5
IRHNJ7230
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Pre-Irradiation
1
10
100
0
500
1000
1500
2000
V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
iss
C
oss
C
rss
0
10
Q , Total Gate Charge (nC)
20
30
40
50
0
4
8
12
16
20
V
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
9.4A
V
= 40V
DS
V
= 100V
DS
V
= 160V
DS
0.1
1
10
100
0.2
0.6
1.0
1.4
1.8
2.2
-V ,Source-to-Drain Voltage (V)
-
S
V = 0 V
T = 25 C
°
T = 150 C
°
0.1
1
10
100
1000
1
10
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150°
= 25 C
°
J
C
V , Drain-to-Source Voltage (V)
D
I
10us
100us
1ms
10ms
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