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参数资料
| 型号： | IRHNJ3230 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9.4A I(D) | SMT |
| 中文描述： | 晶体管| MOSFET的| N沟道| 200伏五（巴西）直| 9.4AI（四）|贴片 |
| 文件页数： | 8/8页 |
| 文件大小： | 120K |
| 代理商： | IRHNJ3230 |
IRHNJ7230
Pre-Irradiation
8
www.irf.com
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A
Total Dose Irradiation with VDS Bias.
160 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = 25V, starting TJ = 25
°
C, L= 3.4mH,
Peak IL = 9.4A, VGS = 12V
ISD
≤
9.4A, di/dt
≤
660A/
μ
s,
VDD
≤
200V, TJ
≤
150
°
C
Pulse width
≤
300
μ
s; Duty Cycle
≤
2%
Footnotes:
Case Outline and Dimensions
—
SMD-0.5
PAD ASSIGNMENTS
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Data and specifications subject to change without notice. 7/00
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