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参数资料
| 型号： | IRL2910S |
| 厂商： | International Rectifier |
| 英文描述： | HEXFET POWER MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件页数： | 1/10页 |
| 文件大小： | 344K |
| 代理商： | IRL2910S |
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Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
The through-hole version (IRL2910L) is available for low-
profile applications.
D2
TO-262
相关PDF资料 |
PDF描述 |
|---|---|
| IRL3402 | N Channel HEXFET Power MOSFET(N 沟道HEXFET功率MOS场效应管) |
| IRL3705N | N-Channel HEXFET Power MOSFET(N沟道 HEXFET 功率MOS场效应管) |
| IRL3713 | SMPS MOSFET |
| IRL3713L | SMPS MOSFET |
| IRL3713S | SMPS MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRL2910SHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 55A 3-Pin(2+Tab) D2PAK 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 55A 3PIN D2PAK - Rail/Tube |
| IRL2910SPBF | 功能描述:MOSFET 100V 1 N-CH HEXFET 26mOhms 54nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRL2910SPBF | 制造商:International Rectifier 功能描述:MOSFET |
| IRL2910SPBF | 制造商:International Rectifier 功能描述:MOSFET N CH 100V 55A D2PAK 制造商:International Rectifier 功能描述:MOSFET, N CH, 100V, 55A, D2PAK 制造商:International Rectifier 功能描述:MOSFET, N CH, 100V, 55A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:100V; On Resistance Rds(on):26mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; No. of Pins:3 ;RoHS Compliant: Yes |
| IRL2910STRL | 功能描述:MOSFET N-CH 100V 55A D2PAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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