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参数资料
| 型号： | IRL3202S |
| 英文描述： | 20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
| 中文描述： | 20V的单个N -沟道HEXFET功率MOSFET的一项D2 - PAK封装 |
| 文件页数： | 2/8页 |
| 文件大小： | 125K |
| 代理商： | IRL3202S |
IRL3202S
Repetitive rating; pulse width limited by
max. junction temperature.
I
SD
￡
29A, di/dt
￡
63A/μs, V
DD
￡
V
(BR)DSS
,
T
J
￡
150°C
Pulse width
￡
300μs; duty cycle
￡
2%.
Notes:
Starting T
J
= 25°C, L = 0.64mH
R
G
= 25
W
, I
AS
= 29A.
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 29A, V
GS
= 0V
T
J
= 25°C, I
F
= 29A
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
68
130
1.3
100
190
V
ns
nC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
48
190
A
Parameter
Min. Typ. Max. Units
20
–––
–––
0.029 –––
–––
––– 0.019
–––
––– 0.016
0.70
–––
28
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
9.8
–––
100
–––
63
–––
82
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 4.5V, I
D
= 29A
V
GS
= 7.0V, I
D
= 29A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 16V, I
D
= 29A
V
DS
= 20V, V
GS
= 0V
V
DS
= 10V, V
GS
= 0V, T
J
= 150°C
V
GS
= 10V
V
GS
= -10V
I
D
= 29A
V
DS
= 16V
V
GS
= 4.5V, See Fig. 6
V
DD
= 10V
I
D
= 29A
R
G
= 9.5
W,
V
GS
= 4.5V
R
D
= 0.3
W,
Between lead,
and center of die contact
V
GS
= 0V
V
DS
= 15V
= 1.0MHz, See Fig. 5
V
(BR)DSS
D
V
(BR)DSS
/
D
T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
–––
V
V/°C
W
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
–––
–––
25
250
100
-100
43
12
13
–––
–––
–––
–––
V
S
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
ns
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
2000 –––
800
290
–––
–––
pF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
R
DS(on)
Static Drain-to-Source On-Resistance
I
GSS
nH
L
S
Internal Source Inductance
–––
7.5
–––
I
DSS
Drain-to-Source Leakage Current
Uses IRL3202 data and test conditions
** When mounted on FR-4 board using minimum recommended footprint.
For recommended footprint and soldering techniques refer to application note #AN-994.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRL3202SPBF | 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFET Power MOSFET |
| IRL3202STRR | 功能描述:MOSFET N-CH 20V 48A D2PAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRL3215 | 功能描述:MOSFET N-CH 150V 12A TO-220AB RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRL3215HR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 150V 12A 3-Pin(3+Tab) TO-220AB |
| IRL3215PBF | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 150V 12A 3-Pin(3+Tab) TO-220AB 制造商:International Rectifier 功能描述:MOSFET N LOGIC TO-220 制造商:International Rectifier 功能描述:MOSFET, N, LOGIC, TO-220 制造商:International Rectifier 功能描述:MOSFET N-Channel 150V 12A TO220AB |
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