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参数资料
| 型号： | IRL3803VL |
| 元件分类： | JFETs |
| 英文描述： | 140 A, 30 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 封装： | TO-262, 3 PIN |
| 文件页数： | 1/11页 |
| 文件大小： | 225K |
| 代理商： | IRL3803VL |
IRL3803VS
IRL3803VL
HEXFET Power MOSFET
07/21/03
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
0.74
RθJA
Junction-to-Ambient (PCB Mounted, steady state)
–––
40
Thermal Resistance
www.irf.com
1
VDSS = 30V
RDS(on) = 5.5m
ID = 140A
S
D
G
Advanced HEXFET Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-
resistance per silicon area.
This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating
die sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D2Pak
is suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount
application.
Description
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
140
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
110
A
IDM
Pulsed Drain Current
470
PD @TA = 25°C
Power Dissipation
3.8
W
PD @TC = 25°C
Power Dissipation
200
W
Linear Derating Factor
1.4
W/°C
VGS
Gate-to-Source Voltage
± 16
V
IAR
Avalanche Current
71
A
EAR
Repetitive Avalanche Energy
20
mJ
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
l Logic-Level Gate Drive
l Advanced Process Technology
l Surface Mount (IRL3803VS)
l Low-profile through-hole (IRL3803VL)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
D2Pak
IRL3803VS
TO-262
IRL3803VL
°C/W
PD - 94735
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRL3803VLPBF | 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFET Power MOSFET |
| IRL3803VPBF | 功能描述:MOSFET MOSFT 140A 50.7nC 5.5mOhm LogLvAB RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRL3803VPBF | 制造商:International Rectifier 功能描述:MOSFET TRANSISTOR POWER DISSIPATION:200W |
| IRL3803VS | 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFET Power MOSFET |
| IRL3803VSPBF | 功能描述:MOSFET MOSFT 30V 140A 5.5mOhm 50.7nC LogLv RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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