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参数资料
型号： IRL3803VL
元件分类： JFETs
英文描述： 140 A, 30 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
封装： TO-262, 3 PIN
文件页数： 4/11页
文件大小： 225K
代理商： IRL3803VL
IRL3803VS/IRL3803VL
2
www.irf.com
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
1.2
V
TJ = 25°C, IS = 71A, VGS = 0V
trr
Reverse Recovery Time
–––
52
78
ns
TJ = 25°C, IF = 71A
Qrr
Reverse Recovery Charge
–––
91
140
nC
di/dt = 100A/s
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
140
470
A
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Starting T
J = 25°C, L = 160H
RG = 25, IAS = 71A, VGS=10V (See Figure 12)
I
SD ≤ 71A, di/dt ≤ 110A/s, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 400s; duty cycle ≤ 2%.
This is a typical value at device destruction and
represents operation outside rated limits.
Notes:
This is a calculated value limited to TJ = 175°C .
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
Uses IRL3803 data and test conditions.
This is applied to D2Pak, when mounted on 1" square PCB
(FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
30
–––
V
VGS = 0V, ID = 250A
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
–––
0.028 –––
V/°C
Reference to 25°C, ID = 1mA
–––
5.5
VGS = 10V, ID = 71A
–––
7.5
VGS = 4.5V, ID = 59A
VGS(th)
Gate Threshold Voltage
1.0
–––
V
VDS = VGS, ID = 250A
gfs
Forward Transconductance
82
–––
S
VDS = 25V, ID = 71A
–––
25
A
VDS = 30V, VGS = 0V
–––
250
VDS = 24V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
100
VGS = 16V
Gate-to-Source Reverse Leakage
–––
-100
nA
VGS = -16V
Qg
Total Gate Charge
–––
76
ID = 71A
Qgs
Gate-to-Source Charge
–––
19
nC
VDS = 24V
Qgd
Gate-to-Drain ("Miller") Charge
–––
35
VGS = 4.5V, See Fig. 6 and 13
td(on)
Turn-On Delay Time
–––
16
–––
VDD = 15V
tr
Rise Time
–––
180
–––
ID = 71A
td(off)
Turn-Off Delay Time
–––
29
–––
RG = 1.3
tf
Fall Time
–––
37
–––
VGS = 4.5V, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
Ciss
Input Capacitance
–––
3720 –––
VGS = 0V
Coss
Output Capacitance
–––
1480 –––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
270
–––
pF
= 1.0MHz, See Fig. 5
EAS
Single Pulse Avalanche Energy
––– 1560
400 mJ
IAS = 71A, L = 0.16mH
S
D
G
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on)
Static Drain-to-Source On-Resistance
IGSS
nH
LS
Internal Source Inductance
–––
7.5
–––
LD
Internal Drain Inductance
–––
4.5
–––
IDSS
Drain-to-Source Leakage Current
m
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