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| 型号： | IRL5602STRLPBF |
| 厂商： | International Rectifier |
| 文件页数： | 2/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 24A D2PAK |
| 标准包装： | 800 |
| 系列： | HEXFET® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 24A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 42 毫欧 @ 12A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 44nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1460pF @ 15V |
| 功率 - 最大： | 75W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 带卷 (TR) |
IRL5602SPbF
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V (BR)DSS
Drain-to-Source Breakdown Voltage
-20 ––– ––– V V GS = 0V, I D = -250μA
? V (BR)DSS / ? T J
Breakdown Voltage Temp. Coefficient
––– -0.013 –––
V/°C Reference to 25°C, I D = -1mA ?
μA
ns
R DS(on)
V GS(th)
g fs
I DSS
I GSS
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
––– ––– 0.042 V GS = -4.5V, I D = -12A ?
––– ––– 0.062 ? V GS = -2.7V, I D = -10A ?
?
––– ––– 0.075 V GS = -2.5V, I D = -10A
-0.7 ––– -1.0 V V DS = V GS , I D = -250μA
12 ––– ––– S V DS = -15V, I D = -12A ?
––– ––– -25 V DS = -20V, V GS = 0V
––– ––– -250 V DS = -16V, V GS = 0V, T J = 150°C
––– ––– 500 V GS = -8.0V
nA
––– ––– -500 V GS = 8.0V
––– ––– 44 I D = -12A
––– ––– 8.7 nC V DS = -16V
––– ––– 19 V GS = -4.5V, See Fig. 6 and 13 ??
––– 9.7 ––– V DD = -10 V
––– 73 ––– I D = -12A
––– 53 ––– R G = 6.0 ? , V GS = 4.5V
––– 84 ––– R D = 0.8 ? , See Fig. 10 ??
L S
Internal Source Inductance
–––
7.5
–––
nH
Between lead,
and center of die contact
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 1460 ––– V GS = 0V
––– 790 ––– pF V DS = -15V
––– 370 ––– ? = 1.0MHz, See Fig. 5 ?
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I S
I SM
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ?
––– –––
––– –––
-24
-96
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
V SD
Diode Forward Voltage
––– ––– -1.4 V T J = 25°C, I S = -12A, V GS = 0V
?
t rr
Q rr
t on
Notes:
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– 58 88 ns T J = 25°C, I F = -12A
––– 54 81 nC di/dt = -100A/μs ?
Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D )
? Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
? Starting T J = 25°C, L = 3.0mH
R G = 25 ? , I AS = -14A. (See Figure 12)
? I SD ≤ -12A, di/dt ≤ 120A/μs, V DD ≤ V (BR)DSS ,
T J ≤ 175°C
? Pulse width ≤ 300μs; duty cycle ≤ 2%.
* When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
2
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| IRL5602STRR | 功能描述:MOSFET P-CH 20V 24A D2PAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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