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参数资料
| 型号： | IRL640L |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 200V 17A TO-262 |
| 标准包装： | 50 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 200V |
| 电流 - 连续漏极(Id) @ 25° C： | 17A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 180 毫欧 @ 10A，5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 66nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 1800pF @ 25V |
| 功率 - 最大： | 3.1W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-262-3，长引线，I²Pak，TO-262AA |
| 供应商设备封装： | TO-262-3 |
| 包装： | 管件 |
| 其它名称： | *IRL640L |
IRL640, SiHL640
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V DS (V)
R DS(on) ( Ω )
Q g (Max.) (nC)
Q gs (nC)
Q gd (nC)
Configuration
V GS = 5.0 V
200
66
9.0
38
Single
0.18
FEATURES
? Dynamic dV/dt Rating
? Repetitive Avalanche Rated
? Logic-Level Gate Drive
? R DS(on) Specified at V GS = 4 V and 5 V
? Fast Switching
? Ease of Paralleling
?
Simple Drive Requirements
Available
RoHS*
COMPLIANT
D
?
Compliant to RoHS Directive 2002/95/EC
TO-220AB
G
DESCRIPTION
Third generation Power MOSFETs from Vishay provides the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost
effectiveness.
G
D
S
S
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
N-Channel MOSFET
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220AB
IRL640PbF
SiHL640-E3
IRL640
SiHL640
ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
V DS
V GS
LIMIT
200
± 10
UNIT
V
Continuous Drain Current
V GS at 5.0 V
T C = 25 °C
T C = 100 °C
I D
17
11
A
Pulsed Drain Current a
I DM
68
Linear Derating Factor
1.0
W/°C
Single Pulse Avalanche Energy b
Repetitive Avalanche Current a
Repetitive Avalanche Energy a
E AS
I AR
E AR
580
10
13
mJ
A
mJ
Maximum Power Dissipation
Peak Diode Recovery dV/dt c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
T C = 25 °C
for 10 s
6-32 or M3 screw
P D
dV/dt
T J , T stg
125
5.0
- 55 to + 150
300 d
10
1.1
W
V/ns
°C
lbf · in
N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V DD = 50 V, starting T J = 25 °C, L = 3.0 mH, R g = 25 Ω I AS = 17 A (see fig. 12).
c. I SD ≤ 17 A, dI/dt ≤ 150 A/ μ s, V DD ≤ V DS , T J ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91305
S11-0519-Rev. B, 21-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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相关代理商/技术参数 |
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| IRL640PBF | 功能描述:MOSFET N-Chan 200V 17 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRL640S | 功能描述:MOSFET N-Chan 200V 17 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRL640SPBF | 功能描述:MOSFET N-Chan 200V 17 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRL640STRL | 功能描述:MOSFET N-Chan 200V 17 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRL640STRLPBF | 功能描述:MOSFET N-Chan 200V 17 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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