参数资料
型号: IRLBD59N04ETRLP
厂商: International Rectifier
文件页数: 1/9页
文件大小: 0K
描述: MOSFET N-CH 40V 59A D2PAK-5
标准包装: 800
系列: HEXFET®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 40V
电流 - 连续漏极(Id) @ 25° C: 59A
开态Rds(最大)@ Id, Vgs @ 25° C: 18 毫欧 @ 35A,10V
Id 时的 Vgs(th)(最大): 2V @ 250µA
闸电荷(Qg) @ Vgs: 50nC @ 5V
输入电容 (Ciss) @ Vds: 2190pF @ 25V
功率 - 最大: 130W
安装类型: 表面贴装
封装/外壳: TO-263-6,D²Pak(5 引线+接片),TO-263BA
供应商设备封装: TO-263-5
包装: 带卷 (TR)
PD -93910B
IRLBD59N04E
HEXFET ? Power MOSFET
Integrated Temperature Sensing Diode
Ultra Low On-Resistance
Dynamic dv/dt Rating
175 ° C Operating Temperature
Fully Avalanche Rated
Zener Gate Protected
Description
The IRLBD59N04E is a 40V, N-channel HEXFET ?
power MOSFET with gate protection provided by
integrated back to back zener diodes. Temperature
sensing is given by the change in forward voltage drop
of two antiparallel electrically isolated poly-silicon diodes.
The IRLBD59N04E provides cost effective temperature
sensing for system protection along with the quality and
ruggedness you expect from a HEXFET power MOSFET.
Absolute Maximum Ratings
V DSS = 40V
R DS(on) = 0.018 ?
I D = 59A
5 Lead-D 2 Pak
Parameter
Max.
Units
I D @ T C = 25°C
Continuous Drain Current, V GS @ 10V
59
I D @ T C = 100°C
I DM
P D @T C = 25°C
V GS
E AS
I AR
E AR
dv/dt
I G
V ESD
T J
T STG
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
V GS Clamp Current
Electrostatic Votage Rating
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
41
230
130
0.89
± 10
340
35
13
3.6
± 50
± 2.0
-55 to + 175
300 (1.6mm from case )
10 lbf?in (1.1N?m)
A
W
W/°C
V
mJ
A
mJ
V/ns
mA
kV
°C
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JC
R θ JA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
–––
–––
1.12
40
°C/W
www.irf.com
1
11/13/01
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