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| 型号： | IRLI2910 |
| 厂商： | International Rectifier |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 31A TO220FP |
| 标准包装： | 50 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 31A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 26 毫欧 @ 16A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 140nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 3700pF @ 25V |
| 功率 - 最大： | 63W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 整包 |
| 供应商设备封装： | TO-220AB 整包 |
| 包装： | 管件 |
| 其它名称： | *IRLI2910 |
PD - 9.1384B
PRELIMINARY
IRLI2910
HEXFET ? Power MOSFET
l
l
l
l
l
l
l
Logic-Level Gate Drive
Advanced Process Technology
Ultra Low On-Resistance
Isolated Package
High Voltage Isolation = 2.5KVRMS ?
Sink to Lead Creepage Dist. = 4.8mm
Fully Avalanche Rated
G
D
S
V DSS = 100V
R DS(on) = 0.026 ?
I D = 31A
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for
use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100
micron mica barrier with standard TO-220 product. The
Fullpak is mounted to a heatsink using a single clip or by a
single screw fixing.
Absolute Maximum Ratings
TO-220 FULLPAK
Parameter
Max.
Units
I D @ T C = 25°C
Continuous Drain Current, V GS @ 10V
31
I D @ T C = 100°C
I DM
P D @T C = 25°C
V GS
E AS
I AR
E AR
dv/dt
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current ??
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ??
Avalanche Current ??
Repetitive Avalanche Energy ?
Peak Diode Recovery dv/dt ??
22
190
63
0.42
±16
520
29
6.3
5.0
A
W
W/°C
V
mJ
A
mJ
V/ns
T J
T STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
-55 to + 175
300 (1.6mm from case )
10 lbf?in (1.1N?m)
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JC
R θ JA
Junction-to-Case
Junction-to-Ambient
–––
–––
2.4
65
°C/W
°C/W
3/16/98
相关PDF资料 |
PDF描述 |
|---|---|
| IRLI3803 | MOSFET N-CH 30V 76A TO220FP |
| IRLI520N | MOSFET N-CH 100V 8.1A TO220FP |
| IRLI530N | MOSFET N-CH 100V 12A TO220FP |
| IRLI540N | MOSFET N-CH 100V 23A TO220FP |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRLI2910HR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 31A 3-Pin(3+Tab) TO-220 Full-Pack |
| IRLI2910PBF | 功能描述:MOSFET MOSFT 100V 27A 26mOhm 93.3nC LogLvl RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRLI3103 | 制造商:未知厂家 制造商全称:未知厂家 功能描述: |
| IRLI3215PBF | 制造商:International Rectifier 功能描述: |
| IRLI3303 | 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFET Power MOSFET |
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