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| 型号： | IRLI3803 |
| 厂商： | International Rectifier |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 76A TO220FP |
| 标准包装： | 50 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 76A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 6 毫欧 @ 40A，10V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 140nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 5000pF @ 25V |
| 功率 - 最大： | 63W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 整包 |
| 供应商设备封装： | TO-220AB 整包 |
| 包装： | 管件 |
| 其它名称： | *IRLI3803 |
PD - 9.1320B
IRLI3803
HEXFET ? Power MOSFET
l
Logic-Level Gate Drive
l Advanced Process Technology
l Ultra Low On-Resistance
D
V DSS = 30V
l Isolated Package
l High Voltage Isolation = 2.5KVRMS ?
l Sink to Lead Creepage Dist. = 4.8mm
l Fully Avalanche Rated
Description
G
S
R DS(on) = 0.006 ?
I D = 76A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
Absolute Maximum Ratings
TO-220 FULLPAK
Parameter
Max.
Units
I D @ T C = 25°C
Continuous Drain Current, V GS @ 5.0V
76
I D @ T C = 100°C
I DM
P D @T C = 25°C
V GS
E AS
I AR
E AR
dv/dt
Continuous Drain Current, V GS @ 5.0V
Pulsed Drain Current ??
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ??
Avalanche Current ??
Repetitive Avalanche Current ?
Peak Diode Recovery dv/dt ??
54
470
63
0.42
±16
610
71
6.3
5.0
A
W
W/°C
V
mJ
A
mJ
V/ns
T J
T STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
-55 to + 175
300 (1.6mm from case)
10 lbf?in (1.1N?m)
°C
Thermal Resistance
Parameter
Min.
Typ.
Max.
Units
R θ JC
R θ JA
Junction-to-Case
Junction-to-Ambient
––––
––––
––––
––––
2.4
65
°C/W
8/25/97
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相关代理商/技术参数 |
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| IRLI3803PBF | 功能描述:MOSFET MOSFT 30V 67A 6mOhm 93.3nC Log Lvl RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRLI510A | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:ADVANCED POWER MOSFET |
| IRLI510ATU | 功能描述:MOSFET 100V N-Channel a-FET Logic Level RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRLI520 | 制造商:IRF 制造商全称:International Rectifier 功能描述:Power MOSFET |
| IRLI520A | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Advanced Power MOSFET |
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