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参数资料
| 型号： | IRLIZ44G |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 30A TO220FP |
| 标准包装： | 1,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 30A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 28 毫欧 @ 18A，5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 66nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 3300pF @ 25V |
| 功率 - 最大： | 48W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 全封装，隔离接片 |
| 供应商设备封装： | TO-220-3 |
| 包装： | 管件 |
| 其它名称： | *IRLIZ44G |
IRLIZ44G, SiHLIZ44G
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V DS (V)
R DS(on) ( Ω )
V GS = 5 V
60
0.028
FEATURES
? Isolated Package
? High Voltage Isolation = 2.5 kV RMS (t = 60 s;
f = 60 Hz)
RoHS
COMPLIANT
Q g (Max.) (nC)
Q gs (nC)
Q gd (nC)
Configuration
TO-220 FULLPAK
G D S
G
66
12
43
Single
D
S
N -Channel MOSFET
? Sink to Lead Creepage Distance = 4.8 mm
? Logic-Level Gate Drive
? R DS(on) Specified at V GS = 4 V and 5 V
? Fast Switching
? Ease of Paralleling
? Lead (Pb)-free
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional
insulating hardware in commercial-industrial applications.
The molding compound used provides a high isolation
capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100
micron mica barrier with standard TO-220 product. The
FULLPAK is mounted to a heatsink using a single clip or by
a single screw fixing.
ORDERING INFORMATION
Package
Lead (Pb)-free
TO-220 FULLPAK
IRLIZ44GPbF
SiHLIZ44G-E3
ABSOLUTE MAXIMUM RATINGS T C = 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
V DS
V GS
LIMIT
60
± 10
UNIT
V
Continuous Drain Current
V GS at 5 V
T C = 25 °C
T C = 100 °C
I D
30
21
A
Pulsed Drain Current a
I DM
120
Linear Derating Factor
0.32
W/°C
Single Pulse Avalanche Energy b
E AS
400
mJ
Maximum Power Dissipation
Peak Diode Recovery dV/dt c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
T C = 25 °C
for 10 s
6-32 or M3 screw
P D
dV/dt
T J , T stg
48
4.5
- 55 to + 175
300 d
10
1.1
W
V/ns
°C
lbf · in
N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V DD = 25 V, starting T J = 25 °C, L = 518 μH, R G = 25 Ω , I AS = 30 A (see fig. 12c).
c. I SD ≤ 51 A, dI/dt ≤ 250 A/μs, V DD ≤ V DS , T J ≤ 175 °C.
d. 1.6 mm from case.
Document Number: 91318
S09-0037-Rev. A, 19-Jan-09
www.vishay.com
1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRLIZ44G_09 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Power MOSFET |
| IRLIZ44GPBF | 功能描述:MOSFET N-Chan 60V 30 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRLIZ44N | 制造商:International Rectifier 功能描述:MOSFET N LOGIC FULLPAK |
| IRLIZ44NHR | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 30A 3PIN TO-220 - Rail/Tube |
| IRLIZ44NPBF | 功能描述:MOSFET MOSFT 55V 28A 22mOhm 32nC Log Lvl RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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