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| 型号： | IRLL2705TR |
| 厂商： | International Rectifier |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 55V 3.8A SOT223 |
| 标准包装： | 1 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 55V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 40 毫欧 @ 3.8A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 48nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 870pF @ 25V |
| 功率 - 最大： | 1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223 |
| 包装： | 剪切带 (CT) |
| 其它名称： | *IRLL2705TR IRLL2705CT |
PD- 91380B
IRLL2705
HEXFET ? Power MOSFET
l
Surface Mount
l
l
Dynamic dv/dt Rating
Logic-Level Gate Drive
D
V DSS = 55V
l Fast Switching
l Ease of Paralleling
l Advanced Process Technology
l Ultra Low On-Resistance
Description
G
S
R DS(on) = 0.04 ?
I D = 3.8A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount
using vapor phase, infra red, or wave soldering techniques.
Its unique package design allows for easy automatic pick-
and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1.0W is possible in a typical surface mount application
Absolute Maximum Ratings
S O T -22 3
Parameter
Max.
Units
I D @ T A = 25°C
Continuous Drain Current, V GS @ 10V**
5.2
I D @ T A = 25°C
I D @ T A = 70°C
I DM
P D @T A = 25°C
P D @T A = 25°C
V GS
E AS
I AR
E AR
dv/dt
T J, T STG
Continuous Drain Current, V GS @ 10V*
Continuous Drain Current, V GS @ 10V*
Pulsed Drain Current ?
Power Dissipation (PCB Mount)**
Power Dissipation (PCB Mount)*
Linear Derating Factor (PCB Mount)*
Gate-to-Source Voltage
Single Pulse Avalanche Energy ?
Avalanche Current ?
Repetitive Avalanche Energy ?
Peak Diode Recovery dv/dt ?
Junction and Storage Temperature Range
3.8
3.0
30
2.1
1.0
8.3
± 16
110
3.8
0.10
7.5
-55 to + 150
A
W
W
mW/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JA
R θ JA
Junction-to-Amb. (PCB Mount, steady state)*
Junction-to-Amb. (PCB Mount, steady state)**
93
48
120
60
°C/W
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
www.irf.com
1
1/22/99
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRLL2705TRHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 5.2A 4-Pin(3+Tab) SOT-223 T/R 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 55V 5.2A 4PIN SOT-223 - Tape and Reel |
| IRLL2705TRPBF | 功能描述:MOSFET MOSFT 55V 3.8A 40mOhm 32nC Log Lvl RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRLL2705TRPBF-CUT TAPE | 制造商:IR 功能描述:Single N-Channel 55 V 2.1 W 32 nC Hexfet Power Mosfet Surface Mount - SOT-223-3 |
| IRLL3303 | 功能描述:MOSFET N-CH 30V 4.6A SOT223 RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRLL3303HR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 6.5A 4-Pin(3+Tab) SOT-223 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 30V 6.5A 4PIN SOT-223 - Bulk |
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