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| 型号： | IRLML2502TR |
| 厂商： | International Rectifier |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 4.2A SOT-23 |
| 标准包装： | 1 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 45 毫欧 @ 4.2A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 12nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 740pF @ 15V |
| 功率 - 最大： | 1.25W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | Micro3?/SOT-23 |
| 包装： | 剪切带 (CT) |
| 其它名称： | *IRLML2502TR IRLML2502 IRLML2502-ND IRLML2502CT |
PD - 93757C
IRLML2502
HEXFET ? Power MOSFET
l
Ultra Low On-Resistance
l
l
l
N-Channel MOSFET
SOT-23 Footprint
Low Profile (<1.1mm)
G 1
3 D
V DSS = 20V
l
l
Available in Tape and Reel
Fast Switching
S
2
R DS(on) = 0.045 ?
Description
These N-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely
low on-resistance per silicon area. This benefit, combined
with the fast switching speed and ruggedized device design
that HEXFET ? power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable device
for use in battery and load management.
A thermally enhanced large pad leadframe has been
incorporated into the standard SOT-23 package to produce
a HEXFET Power MOSFET with the industry's smallest
footprint. This package, dubbed the Micro3 ? , is ideal for
applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro3 allows it
to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards. The thermal
resistance and power dissipation are the best available.
Absolute Maximum Ratings
Micro3 ?
Parameter
Max.
Units
V DS
I D @ T A = 25°C
I D @ T A = 70°C
I DM
P D @T A = 25°C
P D @T A = 70°C
V GS
T J, T STG
Drain- Source Voltage
Continuous Drain Current, V GS @ 4.5V
Continuous Drain Current, V GS @ 4.5V
Pulsed Drain Current ?
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
20
4.2
3.4
33
1.25
0.8
0.01
± 12
-55 to + 150
V
A
W
W/°C
V
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JA
Maximum Junction-to-Ambient ?
75
100
°C/W
www.irf.com
1
04/30/03
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRLML2502TRHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 20V 4.2A 3-Pin Micro T/R |
| IRLML2502TRPBF | 功能描述:MOSFET MOSFT 20V 4.2A 45mOhm 8nC Log Lvl RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRLML2502TRPBF | 制造商:International Rectifier 功能描述:MOSFET |
| IRLML2502TRPBF-CUT TAPE | 制造商:IR 功能描述:Single N-Channel 20 V 1.25 W 8 nC Hexfet Power Mosfet Surface Mount - MICRO-3 |
| IRLML2803 | 制造商:International Rectifier 功能描述:MOSFET N LOGIC SOT-23 |
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