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| 型号： | IRLML6302TR |
| 厂商： | International Rectifier |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 780MA SOT-23 |
| 标准包装： | 1 |
| 系列： | HEXFET® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 780mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 600 毫欧 @ 610mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 3.6nC @ 4.45V |
| 输入电容 (Ciss) @ Vds： | 97pF @ 15V |
| 功率 - 最大： | 540mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | Micro3?/SOT-23 |
| 包装： | 剪切带 (CT) |
| 其它名称： | *IRLML6302TR IRLML6302 IRLML6302-ND IRLML6302CT |
PD - 91259G
IRLML6302
HEXFET ? Power MOSFET
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Generation V Technology
Ultra Low On-Resistance
P-Channel MOSFET
SOT-23 Footprint
Low Profile (<1.1mm)
Available in Tape and Reel
Fast Switching
G 1
S 2
3 D
V DSS = -20V
R DS(on) = 0.60 Ω
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
A customized leadframe has been incorporated into the
standard SOT-23 package to produce a HEXFET Power
MOSFET with the industry's smallest footprint. This
package, dubbed the Micro3, is ideal for applications
where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro3 allows it to fit easily into
extremely thin application environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
Micro3 ?
Parameter
Max.
Units
I D @ T A = 25°C
Continuous Drain Current, V GS @ -4.5V
-0.78
I D @ T A = 70°C
I DM
P D @T A = 25°C
V GS
dv/dt
T J, T STG
Continuous Drain Current, V GS @ -4.5V
Pulsed Drain Current ?
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ?
Junction and Storage Temperature Range
-0.62
-4.9
540
4.3
± 12
-5.0
-55 to + 150
A
mW
mW/°C
V
V/ns
°C
Thermal Resistance
R θ JA
Parameter
Maximum Junction-to-Ambient ?
Typ.
???
Max.
230
Units
°C/W
www.irf.com
1
12/14/11
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRLML6302TRHR | 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 20V 0.78A 3PIN SOT-23 - Tape and Reel |
| IRLML6302TRPBF | 功能描述:MOSFET MOSFT P-Ch -0.62A 600mOhm 2.4nC LogLvl RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRLML6302TRPBF | 制造商:International Rectifier 功能描述:MOSFET |
| IRLML6302TRPBF-CUT TAPE | 制造商:IR 功能描述:Single P-Channel 20 V 540 W 2.4 nC Hexfet Power Mosfet Surface Mount - MICRO-3 |
| IRLML6344TRPBF | 功能描述:MOSFET MOSFT 5.0A 29mOhm 20V 2.5V drv capable RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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