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| 型号： | IRLML6302TR |
| 厂商： | International Rectifier |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 780MA SOT-23 |
| 标准包装： | 1 |
| 系列： | HEXFET® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 780mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 600 毫欧 @ 610mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 3.6nC @ 4.45V |
| 输入电容 (Ciss) @ Vds： | 97pF @ 15V |
| 功率 - 最大： | 540mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | Micro3?/SOT-23 |
| 包装： | 剪切带 (CT) |
| 其它名称： | *IRLML6302TR IRLML6302 IRLML6302-ND IRLML6302CT |
IRLML6302
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Conditions
V (BR)DSS
Drain-to-Source Breakdown Voltage
-20
???
??? V V GS = 0V, I D = -250μA
Δ V (BR)DSS / Δ T J Breakdown Voltage Temp. Coefficient
???
-4.9
??? mV/°C Reference to 25°C, I D = -1mA
0.60 V GS = -4.5V, I D = -0.61A ?
0.90 V GS = -2.7V, I D = -0.31A ?
-1.0 V DS = -16V, V GS = 0V
-25 V DS = -16V, V GS = 0V, T J = 125°C
-100 V GS = -12V
100 V GS = 12V
??? I D = -0.61A
??? R G = 6.2 Ω
R DS(ON)
V GS(th)
g fs
I DSS
I GSS
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
C iss
C oss
C rss
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
???
???
-0.70
0.56
???
???
???
???
???
???
???
???
???
???
???
???
???
???
???
???
???
???
???
???
???
???
2.4
0.56
1.0
13
18
22
22
97
53
28
Ω
-1.5 V V DS = V GS , I D = -250μA
??? S V DS = -10V, I D = -0.31A
μA
nA
3.6 I D = -0.61A
0.84 nC V DS = -16V
1.5 V GS = -4.5V, See Fig. 6 and 9 ?
??? V DD = -10V
ns
??? R D = 16 Ω, See Fig. 10 ?
??? V GS = 0V
??? pF V DS = -15V
??? ? = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I S
I SM
V SD
t rr
Q rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ?
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
???
???
???
???
???
??? -0.54
??? -4.9
???
-1.2
35
53
26
39
A
V
ns
nC
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T J = 25°C, I S = -0.61A, V GS = 0V ?
T J = 25°C, I F = -0.61A
di/dt = 100A/μs ?
G
D
S
Notes:
? Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
? I SD ≤ -0.61A, di/dt ≤ 76A/μs, V DD ≤ V (BR)DSS ,
T J ≤ 150°C
www.irf.com
? Pulse width ≤ 300μs; duty cycle ≤ 2%.
? Surface mounted on FR-4 board, t ≤ 5sec.
2
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