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参数资料
| 型号： | IRLML6302TR |
| 厂商： | International Rectifier |
| 文件页数： | 7/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 780MA SOT-23 |
| 标准包装： | 1 |
| 系列： | HEXFET® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 780mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 600 毫欧 @ 610mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 3.6nC @ 4.45V |
| 输入电容 (Ciss) @ Vds： | 97pF @ 15V |
| 功率 - 最大： | 540mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | Micro3?/SOT-23 |
| 包装： | 剪切带 (CT) |
| 其它名称： | *IRLML6302TR IRLML6302 IRLML6302-ND IRLML6302CT |
IRLML6302
Micro3 (SOT-23) (Lead-Free) Package Outline
Dimensions are shown in millimeters (inches)
6
A
5
DIMENSIONS
D
SYMBOL
A
MILLIMETERS
MIN MAX
0.89
1.12
INCHES
MIN MAX
6
E1
1
3
2
E
0.15 [0.006] M C B A
A1
A2
b
0.01
0.88
0.30
0.10
1.02
0.50
0.0004
c
0.08
0.20
5
B
e
e1
D
E
2.80
2.10
3.04
2.64
A
A2
C
H
4
L1
E1
e
1.20
0.95
1.40
BSC
c
e1
1.90
BSC
A1
0.10 [0.004] C
3X b
0.20 [0.008] M C B A
3X L
7
L2
L
L1
L2
0.40
0.54
0.25
0.60
REF
BSC
REF
BSC
0
8
0
8
Recommended Footprint
0.972
NOTES:
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994
2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: MILLIMETER.
0.802
0.950
2.742
4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.
5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H.
6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES
NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS
OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE.
7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.
1.900
8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB.
Micro3 (SOT-23 / TO-236AB) Part Marking Information
Micro3 / SOT-23 Package Marking
W = (1-26) IF PRECEDED B Y LAS T DIGIT OF CALENDAR YEAR
YEAR
Y
WORK
WEEK
W
PART NUMBER
HALOGEN FREE
INDICATOR
A YW LC
Y = YEAR
W = WEEK
LOT
CODE
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
1
2
3
4
5
6
7
8
9
0
01
02
03
04
24
A
B
C
D
X
25
Y
PART NUMBER CODE REFERENCE:
26 Z
W = (27-52) IF PRECEDED B Y A L ETT ER
A = IRLML2402
B =IRLML2803
C = IRLML2402
D = IRLML5103
E = IRLML6402
F = IRLML6401
G = IRLML2502
H = IRLML5203
Note: A line above the work week
(as shown here) indicates Lead-free
YEAR
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
Y
A
B
C
D
E
F
G
H
J
K
WORK
WEEK
27
28
29
30
50
51
52
W
A
B
C
D
X
Y
Z
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
www.irf.com
7
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRLML6302TRHR | 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 20V 0.78A 3PIN SOT-23 - Tape and Reel |
| IRLML6302TRPBF | 功能描述:MOSFET MOSFT P-Ch -0.62A 600mOhm 2.4nC LogLvl RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRLML6302TRPBF | 制造商:International Rectifier 功能描述:MOSFET |
| IRLML6302TRPBF-CUT TAPE | 制造商:IR 功能描述:Single P-Channel 20 V 540 W 2.4 nC Hexfet Power Mosfet Surface Mount - MICRO-3 |
| IRLML6344TRPBF | 功能描述:MOSFET MOSFT 5.0A 29mOhm 20V 2.5V drv capable RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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