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| 型号： | IRLMS1902TR |
| 厂商： | International Rectifier |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 3.2A 6-TSOP |
| 标准包装： | 1 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 100 毫欧 @ 2.2A，4.5V |
| Id 时的 Vgs(th)（最大）： | 700mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 7nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 300pF @ 15V |
| 功率 - 最大： | 1.7W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-LSOP（0.063"，1.60mm 宽） |
| 供应商设备封装： | Micro6?（TSOP-6） |
| 包装： | 剪切带 (CT) |
| 其它名称： | *IRLMS1902TR IRLMS1902 IRLMS1902CT |
PD - 91540C
IRLMS1902
HEXFET ? Power MOSFET
l
l
l
l
Generation V Technology
Micro6 Package Style
Ultra Low R DS(on)
N-Channel MOSFET
D
D
1
2
6
5
A
D
D
V DSS = 20V
Description
Fifth Generation HEXFET ? power MOSFETs from
G
3
Top View
4
S
R DS(on) = 0.10 ?
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET ? power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
The Micro6 ? package with its customized leadframe
produces a HEXFET ? power MOSFET with R DS(on)
60% less than a similar size SOT-23. This package is
ideal for applications where printed circuit board space
is at a premium. It's unique thermal design and R DS(on)
reduction enables a current-handling increase of nearly
300% compared to the SOT-23.
Absolute Maximum Ratings
Micro6 ?
Parameter
Max.
Units
I D @ T A = 25°C
Continuous Drain Current, V GS @ 4.5V
3.2
I D @ T A = 70°C
I DM
P D @T A = 25°C
V GS
dv/dt
T J, T STG
Continuous Drain Current, V GS @ 4.5V
Pulsed Drain Current ?
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ?
Junction and Storage Temperature Range
2.6
18
1.7
13
± 12
5.0
-55 to + 150
A
W
mW/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
R θ JA
Maximum Junction-to-Ambient ?
Min.
???
Typ.
???
Max
75
Units
°C/W
www.irf.com
1
3/18/04
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| IRLMS2002TR | MOSFET N-CH 20V 6.5A 6-TSOP |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRLMS1902TRHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 20V 3.2A 6-Pin Micro T/R |
| IRLMS1902TRPBF | 功能描述:MOSFET MOSFT 20V 3.2A 100mOhm 4.7nC LogLvl RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRLMS2002 | 制造商:International Rectifier 功能描述:MOSFET N LOGIC MICRO-6 |
| IRLMS2002GTRPBF | 功能描述:MOSFET MOSFT 20V 6.5A 30mOhm 15nC Log Lvl RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRLMS2002PBF | 制造商:International Rectifier 功能描述:MOSFET N LOGIC MICRO-6 制造商:International Rectifier 功能描述:MOSFET, N, LOGIC, MICRO-6 制造商:International Rectifier 功能描述:MOSFET, N, LOGIC, MICRO-6; Transistor Polarity:N Channel; Continuous Drain Current Id:6.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):30mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.2V; No. of Pins:6 ;RoHS Compliant: Yes |
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