参数资料
型号: IRLMS2002TR
厂商: International Rectifier
文件页数: 1/8页
文件大小: 0K
描述: MOSFET N-CH 20V 6.5A 6-TSOP
产品目录绘图: IR Hexfet Micro-6, 6-TSOP
标准包装: 1
系列: HEXFET®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 6.5A
开态Rds(最大)@ Id, Vgs @ 25° C: 30 毫欧 @ 6.5A,4.5V
Id 时的 Vgs(th)(最大): 1.2V @ 250µA
闸电荷(Qg) @ Vgs: 22nC @ 5V
输入电容 (Ciss) @ Vds: 1310pF @ 15V
功率 - 最大: 2W
安装类型: 表面贴装
封装/外壳: 6-LSOP(0.063",1.60mm 宽)
供应商设备封装: Micro6?(TSOP-6)
包装: 剪切带 (CT)
其它名称: *IRLMS2002TR
IRLMS2002CT
PD- 93758D
IRLMS2002
HEXFET ? Power MOSFET
l
l
l
l
l
Ultra Low On-Resistance
N-Channel MOSFET
Surface Mount
Available in Tape & Reel
2.5V Rated
D
D
G
1
2
3
6
5
4
A
D
D
S
V DSS = 20V
R DS(on) = 0.030 ?
Description
These N-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The Micro6 ? package with its customized leadframe
produces a HEXFET ? power MOSFET with R DS(on) 60%
less than a similar size SOT-23. This package is ideal for
applications where printed circuit board space is at a
premium. It's unique thermal design and R DS(on) reduction
enables a current-handling increase of nearly 300%
compared to the SOT-23.
Absolute Maximum Ratings
Top View
Micro6 ?
Parameter
Max.
Units
V DS
I D @ T A = 25°C
I D @ T A = 70°C
I DM
P D @T A = 25°C
P D @T A = 70°C
V GS
T J, T STG
Drain- Source Voltage
Continuous Drain Current, V GS @ 4.5V
Continuous Drain Current, V GS @ 4.5V
Pulsed Drain Current ?
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
20
6.5
5.2
20
2.0
1.3
0.016
± 12
-55 to + 150
V
A
W
W/°C
V
°C
Thermal Resistance
Parameter
Max.
Units
R θ JA
www.irf.com
Maximum Junction-to-Ambient ?
62.5
°C/W
1
01/13/03
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相关代理商/技术参数
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IRLMS2002TRHR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 20V 6.5A 6-Pin Micro T/R 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 20V 6.5A 6PIN MICRO6 - Tape and Reel
IRLMS2002TRPBF 功能描述:MOSFET MOSFT 20V 6.5A 30mOhm 15nC Log Lvl RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRLMS2002TRPBF-CUT TAPE 制造商:IR 功能描述:Single N-Channel 20 V 2 W 15 nC Hexfet Power Mosfet Surface Mount - MICRO-6
IRLMS4502 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFET Power MOSFET
IRLMS4502TR 功能描述:MOSFET P-CH 12V 5.5A 6-TSOP RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件