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| 型号： | IRLMS1902TR |
| 厂商： | International Rectifier |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 3.2A 6-TSOP |
| 标准包装： | 1 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 100 毫欧 @ 2.2A，4.5V |
| Id 时的 Vgs(th)（最大）： | 700mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 7nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 300pF @ 15V |
| 功率 - 最大： | 1.7W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-LSOP（0.063"，1.60mm 宽） |
| 供应商设备封装： | Micro6?（TSOP-6） |
| 包装： | 剪切带 (CT) |
| 其它名称： | *IRLMS1902TR IRLMS1902 IRLMS1902CT |
IRLMS1902
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
??? ??? 0.10 V GS = 4.5V, I D = 2.2A ?
??? ??? 0.17 V GS = 2.7V, I D = 1.1A ?
??? ??? 1.0 V DS = 16V, V GS = 0V
??? ??? 25 V DS = 16V, V GS = 0V, T J = 125°C
??? ??? 100 V GS = 12V
??? ??? -100 V GS = -12V
??? 11 ??? I D = 2.2A
??? 12 ??? R G = 6.0 ?
V (BR)DSS
? V (BR)DSS / ? T J
R DS(on)
V GS(th)
g fs
I DSS
I GSS
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
C iss
C oss
C rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
20 ??? ??? V V GS = 0V, I D = 250μA
??? 0.032 ??? V/°C Reference to 25°C, I D = 1mA
?
0.70 ??? ??? V V DS = V GS , I D = 250μA
3.2 ??? ??? S V DS = 10V, I D = 1.1A
μA
nA
??? 4.7 7.0 I D = 2.2A
??? 0.97 1.5 nC V DS = 16V
??? 1.8 2.6 V GS = 4.5V, See Fig. 6 and 9 ?
??? 7.0 ??? V DD = 10V
ns
??? 4.0 ??? R D = 4.4 ?, See Fig. 10 ?
??? 300 ??? V GS = 0V
??? 120 ??? pF V DS = 15V
??? 50 ??? ? = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I S
I SM
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ?
???
???
???
???
1.7
18
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
V SD
t rr
Q rr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
???
???
???
???
40
37
1.2
60
55
V
ns
nC
T J = 25°C, I S = 2.2A, V GS = 0V ?
T J = 25°C, I F = 2.2A
di/dt = 100A/μs ?
Notes:
? Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
? I SD ≤ 2.2A, di/dt ≤ 110A/μs, V DD ≤ V (BR)DSS ,
T J ≤ 150°C
2
? Pulse width ≤ 300μs; duty cycle ≤ 2%.
? Surface mounted on FR-4 board, t ≤ 5sec.
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相关代理商/技术参数 |
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| IRLMS1902TRHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 20V 3.2A 6-Pin Micro T/R |
| IRLMS1902TRPBF | 功能描述:MOSFET MOSFT 20V 3.2A 100mOhm 4.7nC LogLvl RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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| IRLMS2002GTRPBF | 功能描述:MOSFET MOSFT 20V 6.5A 30mOhm 15nC Log Lvl RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRLMS2002PBF | 制造商:International Rectifier 功能描述:MOSFET N LOGIC MICRO-6 制造商:International Rectifier 功能描述:MOSFET, N, LOGIC, MICRO-6 制造商:International Rectifier 功能描述:MOSFET, N, LOGIC, MICRO-6; Transistor Polarity:N Channel; Continuous Drain Current Id:6.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):30mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.2V; No. of Pins:6 ;RoHS Compliant: Yes |
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