参数资料
型号: IRLML6344TRPBF
厂商: International Rectifier
文件页数: 1/10页
文件大小: 0K
描述: MOSFET N-CH 30V 5A SOT23
标准包装: 1
系列: HEXFET®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 5A
开态Rds(最大)@ Id, Vgs @ 25° C: 29 毫欧 @ 5A,4.5V
Id 时的 Vgs(th)(最大): 1.1V @ 10µA
闸电荷(Qg) @ Vgs: 6.8nC @ 4.5V
输入电容 (Ciss) @ Vds: 650pF @ 25V
功率 - 最大: 1.3W
安装类型: 表面贴装
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商设备封装: SOT-23
包装: 标准包装
其它名称: IRLML6344TRPBFDKR
PD - 97585
IRLML6344TRPbF
HEXFET ? Power MOSFET
V DS
30
V
V GS Max
R DS(on) max
(@V GS = 4.5V)
± 12
29
V
m Ω
G 1
3 D
R DS(on) max
(@V GS = 2.5V)
37
m Ω
S
2
Micro3 TM (SOT-23)
IRLML6344TRPbF
Application(s)
? Load/ System Switch
Features and Benefits
Low R DSon (<29m Ω )
Industry-standard SOT-23 Package
Benefits
Lower Conduction Losses
Multi-vendor compatibility
RoHS compliant containing no lead, no bromide and no halogen
MSL1, Consumer Qualification
Absolute Maximum Ratings
results in
Environmentally friendly
Increased Reliability
Symbol
V DS
I D @ T A = 25°C
I D @ T A = 70°C
I DM
P D @T A = 25°C
P D @T A = 70°C
V GS
T J, T STG
Parameter
Drain-Source Voltage
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
30
5.0
4.0
25
1.3
0.8
0.01
± 12
-55 to + 150
Units
V
A
W
W/°C
V
°C
Thermal Resistance
R θ JA
R θ JA
Symbol
Parameter
Junction-to-Ambient
Junction-to-Ambient (t<10s)
Typ.
–––
–––
Max.
100
99
Units
°C/W
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes ? through ? are on page 10
www.irf.com
1
10/28/10
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