参数资料
型号: IRLML6344TRPBF
厂商: International Rectifier
文件页数: 10/10页
文件大小: 0K
描述: MOSFET N-CH 30V 5A SOT23
标准包装: 1
系列: HEXFET®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 5A
开态Rds(最大)@ Id, Vgs @ 25° C: 29 毫欧 @ 5A,4.5V
Id 时的 Vgs(th)(最大): 1.1V @ 10µA
闸电荷(Qg) @ Vgs: 6.8nC @ 4.5V
输入电容 (Ciss) @ Vds: 650pF @ 25V
功率 - 最大: 1.3W
安装类型: 表面贴装
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商设备封装: SOT-23
包装: 标准包装
其它名称: IRLML6344TRPBFDKR
IRLML6344TRPbF
Orderable part number
Package Type
Standard Pack
Note
Form Quantity
IRLML6344TRPbF
Micro3 ? (SOT-23)
Tape and Reel 3000
(per JEDEC JESD47F
guidelines )
Qualification information
Qualification level
?
Consumer ??
???
(per IPC/JEDEC J-STD-020D
Moisture Sensitivity Level
RoHS compliant
Micro3 ? (SOT-23)
Yes
MSL1
???
)
?
??
???
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Notes:
? Repetitive rating; pulse width limited by max. junction temperature.
? Pulse width ≤ 400 μ s; duty cycle ≤ 2%.
? Surface mounted on 1 in square Cu board
? Refer to application note #AN-994.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information . 10/2010
10
www.irf.com
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