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参数资料
| 型号： | IRLML6344TRPBF |
| 厂商： | International Rectifier |
| 文件页数： | 8/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 5A SOT23 |
| 标准包装： | 1 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 29 毫欧 @ 5A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.1V @ 10µA |
| 闸电荷(Qg) @ Vgs： | 6.8nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 650pF @ 25V |
| 功率 - 最大： | 1.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23 |
| 包装： | 标准包装 |
| 其它名称： | IRLML6344TRPBFDKR |
IRLML6344TRPbF
Micro3 ? (SOT-23) Package Outline
Dimensions are shown in millimeters (inches)
DIMENSIONS
6
D
A
5
SYMBOL
MILLIMETERS
MIN MAX
INCHES
MIN MAX
6
E1
1
3
2
E
0.15 [0.006] M C B A
A
A2
C
0.10 [0.004] C
A
A1
A2
b
c
0.89
0.01
0.88
0.30
0.08
1.12
0.10
1.02
0.50
0.20
0.0004
A1
3X b
D
2.80
3.04
5
B
e
e1
NOTES:
0.20 [0.008] M C B A
E
E1
2.10
1.20
2.64
1.40
e
e1
0.95
1.90
BSC
BSC
H 4
L1
Recommended Footprint
L
L1
0.40
0.54
0.60
REF
REF
c
0.972
L2
0.25
0
BSC
8
0
BSC
8
L2
0.802
0.950
2.742
3X L
7
1.900
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994
2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: MILLIMETER.
4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.
5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H.
6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES
NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS
OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE.
7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.
8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB.
Micro3 ? (SOT-23) Part Marking Information
W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR
DAT E CODE
PART NUMBER
Cu WIRE
HALOGEN FREE
LEAD FREE
LOT CODE
YEAR
2001
2002
2003
2004
2005
2006
Y
1
2
3
4
5
6
WORK
WEEK
01
02
03
04
W
A
B
C
D
X = PART NUMBER CODE REFERENCE:
2007
7
A = IRLML2402
B = IRLML2803
C = IRLML6302
D = IRLML5103
S=
T=
U=
V=
IRLML6244
IRLML6246
IRLML6344
IRLML6346
2008
2009
2010
8
9
0
24
25
26
X
Y
Z
E = IRLML6402
F = IRLML6401
G = IRLML2502
W = (27-52) IF PRECEDED BY A LET T ER
WORK
H = IRLML5203
I = IRLML0030
J = IRLML2030
K = IRLML0100
L = IRLML0060
M = IRLML0040
N = IRLML2060
P = IRLML9301
R = IRLML9303
Note: A line above the work week
(as s hown here) indicates Lead - F ree.
YEAR
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
Y
A
B
C
D
E
F
G
H
J
K
WEEK
27
28
29
30
50
51
52
W
A
B
C
D
X
Y
Z
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
8
www.irf.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRLML6346PBF | 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFET Power MOSFET |
| IRLML6346TRPBF | 功能描述:MOSFET MOSFT 3.4A 63mOhm 30V 2.5V drv capable RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRLML6346TRPBF | 制造商:International Rectifier 功能描述:MOSFET N CH 30V 3.4A SOT23 制造商:International Rectifier 功能描述:MOSFET, N CH, 30V, 3.4A, SOT23 制造商:International Rectifier 功能描述:MOSFET, N CH, 30V, 3.4A, SOT23, Transistor Polarity:N Channel, Continuous Drain 制造商:International Rectifier 功能描述:MOSFET, N CH, 30V, 3.4A, SOT23, Transistor Polarity:N Channel, Continuous Drain Current Id:3.4A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.046ohm, Rds(on) Test Voltage Vgs:4.5V, Threshold Voltage Vgs:800mV, Power , RoHS Compliant: Yes |
| IRLML6401 | 制造商:International Rectifier 功能描述:MOSFET P SOT-23 |
| IRLML6401GPBF | 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFETPower MOSFET |
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