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| 型号： | IRLIZ44G |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 30A TO220FP |
| 标准包装： | 1,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 30A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 28 毫欧 @ 18A，5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 66nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 3300pF @ 25V |
| 功率 - 最大： | 48W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 全封装，隔离接片 |
| 供应商设备封装： | TO-220-3 |
| 包装： | 管件 |
| 其它名称： | *IRLIZ44G |
IRLIZ44G, SiHLIZ44G
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
SYMBOL
R thJA
R thJC
TYP.
-
-
MAX.
65
3.1
UNIT
°C/W
SPECIFICATIONS T J = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
V DS
Δ V DS /T J
V GS(th)
I GSS
I DSS
V GS = 0 V, I D = 250 μA
Reference to 25 °C, I D = 1 mA
V DS = V GS , I D = 250 μA
V GS = ± 10 V
V DS = 60 V, V GS = 0 V
V DS = 48 V, V GS = 0 V, T J = 150 °C
60
-
1.0
-
-
-
-
0.070
-
-
-
-
-
-
2.0
± 100
25
250
V
V/°C
V
nA
μA
Drain-Source On-State Resistance
R DS(on)
V GS = 5.0 V
V GS = 4.0 V
I D = 18 A b
I D = 15 A b
-
-
-
-
0.028
0.039
Ω
Forward Transconductance
g fs
V DS = 25 V, I D = 18 A b
22
-
-
S
Dynamic
Input Capacitance
C iss
V GS = 0 V,
-
3300
-
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
Total Gate Charge
C oss
C rss
C
Q g
V DS = 25 V,
f = 1.0 MHz, see fig. 5
f = 1.0 MHz
-
-
-
-
1200
200
12
-
-
-
-
66
pF
Gate-Source Charge
Q gs
V GS = 5.0 V
I D = 51 A, V DS = 48 V,
see fig. 6 and 13 b
-
-
12
nC
Gate-Drain Charge
Turn-On Delay Time
Q gd
t d(on)
-
-
-
17
43
-
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(off)
t f
V DD = 30 V, I D = 51 A,
R G = 4.6 Ω , R D = 0.56 Ω ,
see fig. 10 b
-
-
-
230
42
110
-
-
-
ns
Internal Drain Inductance
L D
Between lead,
6 mm (0.25") from
D
-
4.5
-
package and center of
G
nH
Internal Source Inductance
L S
die contact
S
-
7.5
-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current a
I S
I SM
MOSFET symbol
showing the
integral reverse
p - n junction diode
G
D
S
-
-
-
-
30
120
A
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
V SD
t rr
Q rr
T J = 25 °C, I S = 30 A, V GS = 0 V b
T J = 25 °C, I F = 51 A, dI/dt = 100 A/μs b
-
-
-
-
90
0.65
2.5
180
1.3
V
ns
μC
Forward Turn-On Time
t on
Intrinsic turn-on time is negligible (turn-on is dominated by L S and L D )
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
www.vishay.com
2
Document Number: 91318
S09-0037-Rev. A, 19-Jan-09
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