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| 型号： | IRL640STRR |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 200V 17A D2PAK |
| 标准包装： | 800 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 200V |
| 电流 - 连续漏极(Id) @ 25° C： | 17A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 180 毫欧 @ 10A，5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 66nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 1800pF @ 25V |
| 功率 - 最大： | 3.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 带卷 (TR) |
IRL640S, SiHL640S
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
FEATURES
? Halogen-free According to IEC 61249-2-21
V DS (V)
200
Definition
R DS(on) ( ? )
Q g (Max.) (nC)
Q gs (nC)
Q gd (nC)
Configuration
V GS = 5 V
66
9.0
38
Single
0.18
? Surface Mount
? Available in Tape and Reel
? Dynamic dV/dt Rating
? Repetitive Avalanche Rated
? Logic-Level Gate Drive
? R DS(on) Specified at V GS = 4 V and 5 V
? Fast Switching
? Compliant to RoHS Directive 2002/95/EC
SMD-220
K
D
G
S
G
D
S
N-Channel MOSFET
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design,
low on-resistance and
cost-effectiveness.
The SMD-220 is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
SMD-220 is suitable for high current applications because
of its low internal connection resistance and can dissipate
up to 2.0 W in a typical surface mount application.
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
SMD-220
SiHL640S-GE3
IRL640SPbF
SiHL640S-E3
SMD-220
SiHL640STRL-GE3 a
IRL640STRLPbF a
SiHL640STL-E3 a
SMD-220
SiHL640STRR-GE3 a
IRL640STRRPbF a
SiHL640STR-E3 a
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
V DS
V GS
LIMIT
200
± 10
UNIT
V
Continuous Drain Current
V GS at 5.0 V
T C = 25 °C
T C = 100 °C
I D
17
11
A
Pulsed Drain Current a
I DM
68
Linear Derating Factor
Linear Derating Factor (PCB Mount) e
1.0
0.025
W/°C
Single Pulse Avalanche Energy b
Repetitive Avalanche Current a
Repetitive Avalanche Energy a
Maximum Power Dissipation T C = 25 °C
Maximum Power Dissipation (PCB Mount) e T A = 25 °C
E AS
I AR
E AR
P D
580
10
13
125
3.1
mJ
A
mJ
W
Peak Diode Recovery dV/dt
c
dV/dt
5.0
V/ns
Operating Junction and Storage Temperature Range T J , T stg
Soldering Temperature for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V DD = 50 V, starting T J = 25 °C, L = 3.0 mH, R g = 25 ? , I AS = 17 A (see fig. 12).
c. I SD ? 17 A, dI/dt ? 150 A/μs, V DD ? V DS , T J ? 150 °C.
d. 1.6 mm from case.
e. When mounted on 1” square PCB (FR-4 or G-10 Material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91306
S11-1055-Rev. C, 30-May-11
- 55 to + 150
300 d
°C
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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