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| 型号： | IRL640L |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 200V 17A TO-262 |
| 标准包装： | 50 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 200V |
| 电流 - 连续漏极(Id) @ 25° C： | 17A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 180 毫欧 @ 10A，5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 66nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 1800pF @ 25V |
| 功率 - 最大： | 3.1W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-262-3，长引线，I²Pak，TO-262AA |
| 供应商设备封装： | TO-262-3 |
| 包装： | 管件 |
| 其它名称： | *IRL640L |
IRL640, SiHL640
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SYMBOL
R thJA
R thCS
R thJC
TYP.
-
0.50
-
MAX.
62
-
1.0
UNIT
°C/W
SPECIFICATIONS (T J = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
V DS
Δ V DS /T J
V GS(th)
I GSS
I DSS
V GS = 0 V, I D = 250 μA
Reference to 25 °C, I D = 1 mA
V DS = V GS , I D = 250 μA
V GS = ± 10
V DS = 200 V, V GS = 0 V
V DS = 160 V, V GS = 0 V, T J = 125 °C
200
-
1.0
-
-
-
-
0.27
-
-
-
-
-
-
2.0
± 100
25
250
V
V/°C
V
nA
μA
Drain-Source On-State Resistance
R DS(on)
V GS = 5.0 V
V GS = 4.0 V
I D = 10 A b
I D = 8.5 A b
-
-
-
-
0.18
0.27
Ω
Forward Transconductance
g fs
V DS = 50 V, I D = 10 A b
16
-
-
S
Dynamic
Input Capacitance
C iss
V GS = 0 V
-
1800
-
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C oss
C rss
Q g
V DS = 25 V
f = 1.0 MHz, see fig. 5
-
-
-
400
120
-
-
-
66
pF
Gate-Source Charge
Q gs
V GS = 5.0 V
I D = 17 A, V DS = 160 V,
see fig. 6 and 13 b
-
-
9.0
nC
Gate-Drain Charge
Turn-On Delay Time
Q gd
t d(on)
-
-
-
8.0
38
-
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(off)
t f
V DD = 100 V, I D = 17 A
R g = 4.6 Ω , R D = 5.7 Ω , see fig. 10 b
-
-
-
83
44
52
-
-
-
ns
Internal Drain Inductance
L D
Between lead,
6 mm (0.25") from
package and center of
G
D
-
4.5
-
nH
Internal Source Inductance
L S
die contact
-
7.5
-
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current a
I S
I SM
MOSFET symbol
showing the
integral reverse
p - n junction diode
G
D
S
-
-
-
-
17
68
A
Body Diode Voltage
V SD
T J = 25 °C, I S = 17 A, V GS = 0
V b
-
-
2.0
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
t rr
Q rr
T J = 25 °C, I F = 17 A, dI/dt = 100 A/μs b
-
-
310
3.2
470
4.8
ns
μC
Forward Turn-On Time
t on
Intrinsic turn-on time is negligible (turn-on is dominated by L S and L D )
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
www.vishay.com
2
Document Number: 91305
S11-0519-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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