参数资料
型号: IRLBL1304
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 95A I(D) | TO-263AA
中文描述: 晶体管| MOSFET的| N沟道| 40V的五(巴西)直| 95A章一(d)|对263AA
文件页数: 4/8页
文件大小: 215K
代理商: IRLBL1304
IRLBL1304
4
www.irf.com
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
0
2000
4000
6000
8000
10000
12000
V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
iss
C
oss
C
rss
0
40
Q , Total Gate Charge (nC)
80
120
160
200
0
3
6
9
12
15
V
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
110A
V
= 8V
DS
V
= 20V
DS
V
= 32V
DS
10
100
1000
0.4
0.6
V ,Source-to-Drain Voltage (V)
0.8
1.0
1.2
1.4
1.6
1.8
I
S
V = 0 V
T = 25 C
T = 175 C
°
10
100
D
1000
10000
1
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 175°
= 25 C
°
J
C
V , Drain-to-Source Voltage (V)
I
10us
100us
1ms
10ms
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