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参数资料
| 型号： | IRLI2203N |
| 厂商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件页数： | 2/8页 |
| 文件大小： | 113K |
| 代理商： | IRLI2203N |
IRLI2203N
Parameter
Min. Typ. Max. Units
30
–––
–––
0.035 –––
–––
––– 0.007
–––
–––
1.0
–––
47
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
15
–––
210
–––
29
–––
54
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 37A
V
GS
= 4.5V, I
D
= 31A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 60A
V
DS
= 30V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 150°C
V
GS
= 16V
V
GS
= -16V
I
D
= 60A
V
DS
= 24V
V
GS
= 4.5V, See Fig. 6 and 13
V
DD
= 15V
I
D
= 60A
R
G
= 1.8
,
V
GS
= 4.5V
R
D
= 0.25
,
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
= 1.0MHz
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
–––
V
V/°C
0.01
–––
–––
25
250
100
-100
110
31
57
–––
–––
–––
–––
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
V
S
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
ns
C
iss
C
oss
C
rss
C
Source-Drain Ratings and Characteristics
Parameter
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse RecoveryCharge
t
on
Forward Turn-On Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
–––
–––
–––
–––
3500 –––
1400 –––
690
12
–––
–––
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
R
DS(on)
Static Drain-to-Source On-Resistance
I
GSS
nH
L
S
Internal Source Inductance
–––
7.5
–––
L
D
Internal Drain Inductance
–––
4.5
–––
I
DSS
Drain-to-Source Leakage Current
S
D
G
pF
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
= 15V, starting T
J
= 25°C, L = 220μH
R
G
= 25
, I
AS
= 60A. (See Figure 12)
I
SD
≤
60A, di/dt
≤
140A/μs, V
DD
≤
V
(BR)DSS
,
T
≤
175°C
Pulse width
≤
300μs; duty cycle
≤
2%.
t=60s, =60Hz
Uses IRL2203N data and test conditions
Rev. #
Parameters
V
GS(th)
(Max.)
V
GS
(Max.)
Old spec.
2.5V
±20
New spec.
No spec.
±16
Comments
Revision Date
11/1/96
11/1/96
1
1
Removed V
GS(th)
Max. Specification
Decrease V
GS
Max. Specification
Specification changes
S
D
G
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 37A, V
GS
= 0V
T
J
= 25°C, I
F
= 60A
di/dt = 100A/μs
–––
–––
–––
–––
–––
–––
–––
–––
94
280
1.3
140
410
V
ns
μC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
A
61
400
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