参数资料
型号: IRLI620
厂商: International Rectifier
英文描述: Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=4.0A)
中文描述: 功率MOSFET(减振钢板基本\u003d 200V的电压,的Rds(on)\u003d 0.80ohm,身份证\u003d 4.0a上)
文件页数: 3/8页
文件大小: 339K
代理商: IRLI620
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
IRLI620G
Fig 1.
Typical Output Characteristics,
T
C
= 25
o
C
Fig 2.
Typical Output Characteristics,
T
C
= 150
o
C
0.01
0.1
1
10
100
0.01
0.1
1
10
100
I
D
V , Drain-to-Source Voltage (V)
VGS
2.25V
20μs PULSE WIDTH
T = 150°C
A
0.1
1
10
100
0.1
1
10
100
I
D
V , Drain-to-Source Voltage (V)
VGS
2.25V
20μs PULSE WIDTH
T = 150°C
A
0.01
0.1
1
10
100
2.0
2.5
V , Gate-to-Source Voltage (V)
3.0
3.5
4.0
4.5
5.0
T = 25°C
T = 150°C
D
I
V = 50V
20μs PULSE WIDTH
A
0.0
0.5
1.0
1.5
2.0
2.5
-60
-40
-20
0
20
40
60
80
100 120 140 160
T , Junction Temperature (°C)
R
D
(
V = 5.0V
I = 5.2A
A
To Order
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IRLI620A 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:ADVANCED POWER MOSFET
IRLI620ATU 功能描述:MOSFET 200V N-Channel a-FET Logic Level RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRLI620G 功能描述:MOSFET N-Chan 200V 4.1 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRLI620GPBF 功能描述:MOSFET N-Chan 200V 4.1 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRLI630 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:ADVANCED POWER MOSFET