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参数资料
| 型号： | IRLML6402PBF |
| 厂商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件页数： | 7/8页 |
| 文件大小： | 140K |
| 代理商： | IRLML6402PBF |
www.irf.com
7
Micro3 (SOT-23/TO-236AB) Part Marking Information
PART NUMBER
PART NUMBER CODE REFERENCE:
A = IRLML2402
B = IRLML2803
C = IRLML6302
D = IRLML5103
E = IRLML6402
H = IRLML5203
G = IRLML2502
F = IRLML6401
LOT
CODE
Y = YEAR
W = WEEK
W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR
W = (27-52) IF PRECEDED BY A LETTER
26
Z
1994
1995
1998
1999
2000
1996
1997
YEAR
2002
2003
2001
30
D
D
E
50
51
52
H
J
K
F
G
X
Y
Z
27
28
29
WEEK
Y
B
C
A
W
B
C
A
2003
1994
1997
1998
2000
1999
1995
1996
2001
2002
YEAR
03
04
C
D
3
4
24
25
7
8
0
9
5
6
X
Y
01
02
WEEK
1
2
Y
A
B
W
0.08
2.80
2.10
0.88
0.30
0.01
0.89
0.95 BSC
1.90 BSC
MILLIMETERS
MIN
e
e1
E
E1
D
L
A
A1
A2
b
c
M
B
O
S
Y
MIN
.036
.0004
.035
MAX
1.12
0.10
MAX
.044
.0375 BSC
.075 BSC
.0158
DIMENSIONS
INCHES
bbb
ccc
0.15
.008
.006
0.25 BSC
0°
0.10
L1
0
L
0.40
0.60
.0118 BSC
0°
aaa
0.20
.004
8°
8°
1.20
E1
E
D
5
6
3
1
2
ccc
C B A
B
5
6
e
e1
A2
A
A1
bbb
C A B
3X b
aaa C
3 SURF
0
3X L
L1
H
4
7
.0119
.0032
.111
.083
.048
.055
.119
.103
.0196
.0078
.0039
.040
.0236
1.02
0.50
0.20
3.04
2.64
1.40
1.90
[.075]
0.95
[.0375]
0.972
[.038]
2.742
[.1079]
0.802
[.031]
RECOMMENDED FOOTPRINT
3X
3X
NOTES
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994.
2. DIMENSIONS ARE SHOWN IN MILLIMETERS AND INCHES.
3. CONTROLLING DIMENSION: MILLIMETER.
4 DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.
5 DATUM A AND B TO BE DETERMINED AT DATUM PLANE H.
6 DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H.
7 DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.
8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236AB.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRLML6402TR | 功能描述:MOSFET P-CH 20V 3.7A SOT-23 RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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| IRLML6402TRPBF | 制造商:International Rectifier 功能描述:MOSFET |
| IRLML6402TRPBF-CUT TAPE | 制造商:IR 功能描述:Single P-Channel 20 V 1.3 W 8 nC Hexfet Power Mosfet Surface Mount - MICRO-3 |
| IRLML9301TRPBF | 功能描述:MOSFET MOSFT P-Ch -30V -3.6A 64mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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