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参数资料
| 型号： | IRLMS5703 |
| 厂商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件页数： | 1/9页 |
| 文件大小： | 276K |
| 代理商： | IRLMS5703 |
IRLMS5703
HEXFET
Power MOSFET
V
DSS
= -30V
R
DS(on)
= 0.20
PD - 91413
E
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The Micro6 package with its customized leadframe
produces a HEXFET power MOSFET with Rds(on)
60% less than a similar size SOT-23. This package is
ideal for applications where printed circuit board space
is at a premium. It's unique thermal design and R
reduction enables a current-handling increase of nearly
300% compared to the SOT-23.
Description
4/7/04
M icro6
l
Generation V Technology
l
Micro6 Package Style
l
Ultra Low Rds(on)
l
P-Channel MOSFET
Top View
1
2
D
G
A
D
D
D
S
3
4
5
6
Absolute Maximum Ratings
Parameter
Max.
-2.3
-1.9
-13
1.7
13
± 20
5.0
Units
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@- 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
A
W
mW/°C
V
V/ns
°C
V
GS
dv/dt
T
J,
T
STG
-55 to + 150
Parameter Min. Typ. Max Units
R
θ
JA
Maximum Junction-to-Ambient
––– ––– 75 °C/W
Thermal Resistance Ratings
相关PDF资料 |
PDF描述 |
|---|---|
| IRLMS6802 | HEXFET Power MOSFET |
| IRLR024N | HEXFET Power MOSFET |
| IRLU024N | HEXFET Power MOSFET |
| IRLR024PBF | HEXFET POWER MOSFET |
| IRLR024Z | AUTOMOTIVE MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRLMS5703TR | 功能描述:MOSFET P-CH 30V 2.3A 6-TSOP RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRLMS5703TRPBF | 功能描述:MOSFET MOSFT P-Ch -2.3A 200mOhm 7.2nC LogLvl RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRLMS5703TRPBF | 制造商:International Rectifier 功能描述:MOSFET |
| IRLMS5703TRPBF-CUT TAPE | 制造商:IR 功能描述:Single P-Channel 30 V 1.7 W 7.2 nC Hexfet Power Mosfet Surface Mount - MICRO-6 |
| IRLMS6702 | 制造商:International Rectifier 功能描述:MOSFET P LOGIC MICRO-6 |
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