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参数资料
| 型号： | IRLMS6802 |
| 厂商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件页数： | 1/7页 |
| 文件大小： | 93K |
| 代理商： | IRLMS6802 |
Parameter
Max.
-20
-5.6
-4.5
-45
2.0
1.3
0.016
31
± 12
Units
V
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
Drain- Source Voltage
Continuous Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Gate-to-Source Voltage
Junction and Storage Temperature Range
A
W/°C
mJ
V
°C
E
AS
V
GS
T
J,
T
STG
-55 to + 150
01/13/03
Parameter
Max.
62.5
Units
°C/W
R
θ
JA
www.irf.com
Maximum Junction-to-Ambient
Thermal Resistance
1
IRLMS6802
HEXFET Power MOSFET
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The Micro6
package with its customized leadframe
produces a HEXFET
power MOSFET with R
DS(on)
60%
less than a similar size SOT-23. This package is ideal for
applications where printed circuit board space is at a
premium. The unique thermal design and R
DS(on)
reduction
enables a current-handling increase of nearly 300%
compared to the SOT-23.
V
DSS
= -20V
R
DS(on)
= 0.050
Description
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Top View
1
2
D
G
A
D
D
D
S
3
4
5
6
Micro6
PD- 91848E
相关PDF资料 |
PDF描述 |
|---|---|
| IRLR024N | HEXFET Power MOSFET |
| IRLU024N | HEXFET Power MOSFET |
| IRLR024PBF | HEXFET POWER MOSFET |
| IRLR024Z | AUTOMOTIVE MOSFET |
| IRLU024Z | AUTOMOTIVE MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRLMS6802PBF | 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFET Power MOSFET |
| IRLMS6802TR | 功能描述:MOSFET P-CH 20V 5.6A 6-TSOP RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRLMS6802TRHR | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 20V 5.6A 6-Pin Micro T/R 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 20V 5.6A 6PIN MICRO6 - Tape and Reel |
| IRLMS6802TRPBF | 功能描述:MOSFET MOSFT P-Ch -5.6A 50mOhm 11nC Log Lvl RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRLMS6802TRPBF | 制造商:International Rectifier 功能描述:MOSFET Transistor Power Dissipation:2.0W |
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