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参数资料
| 型号： | IRLMS6802 |
| 厂商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件页数： | 2/7页 |
| 文件大小： | 93K |
| 代理商： | IRLMS6802 |
2
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Parameter
Min. Typ. Max. Units
-20
–––
––– -0.005 –––
–––
––– 0.050
–––
––– 0.100
-0.60 –––
1.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
11
–––
2.2
–––
2.9
–––
12
–––
33
–––
70
–––
72
–––
1079 –––
–––
220
–––
152
Conditions
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
–––
V
V
GS
= 0V, I
D
= -250μA
Reference to 25°C, I
D
= -1mA
V
GS
= -4.5V, I
D
= -5.1A
V
GS
= -2.5V, I
D
= -3.4A
V
DS
= V
GS
, I
D
= -250μA
V
DS
= -10V, I
D
= -0.80A
V
DS
= -16V, V
GS
= 0V
V
DS
= -16V, V
GS
= 0V, T
J
= 125°C
V
GS
= -12V
V
GS
= 12V
I
D
= -4.5A
V
DS
= -10V
V
GS
= -5.0V
V
DD
= -10V
I
D
= -1.0A
R
G
= 6.0
R
D
= 10
V
GS
= 0V
V
DS
= -10V
= 1.0MHz
V/°C
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
-1.2
–––
-1.0
-25
-100
100
16
3.3
4.3
–––
–––
–––
–––
V
S
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
nC
–––
–––
pF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -1.6A, V
GS
= 0V
T
J
= 25°C, I
F
= -3.0A
di/dt = -100A/μs
I
SM
V
SD
t
rr
Q
rr
–––
–––
–––
–––
74
45
-1.2
110
67
V
ns
nC
Source-Drain Ratings and Characteristics
45
2.0
S
D
G
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width
≤
400μs; duty cycle
≤
Surface mounted on FR-4 board, t
≤
Starting T
J
= 25°C, L = 6.8mH
R
G
= 25
, I
AS
= -3.0A. (See Figure 12)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRLMS6802PBF | 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFET Power MOSFET |
| IRLMS6802TR | 功能描述:MOSFET P-CH 20V 5.6A 6-TSOP RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRLMS6802TRHR | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 20V 5.6A 6-Pin Micro T/R 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 20V 5.6A 6PIN MICRO6 - Tape and Reel |
| IRLMS6802TRPBF | 功能描述:MOSFET MOSFT P-Ch -5.6A 50mOhm 11nC Log Lvl RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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