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参数资料
| 型号： | IRLMS6802 |
| 厂商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件页数： | 7/7页 |
| 文件大小： | 93K |
| 代理商： | IRLMS6802 |
www.irf.com
7
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
Data and specifications subject to change without notice. 01/03
This product has been designed and qualified for the consumer market.
Qualification Standards can be found on IR’s Web site.
WW = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR
01
02
03
04
24
25
26
W
YEAR
Y
A
B
C
D
2001
2002
2003
2004
2005
1996
1997
1998
1
2
3
4
5
X
Y
Z
1999
2000
0
WW = (27-52) IF PRECEDED BY A LETTER
27
28
29
30
50
51
W
YEAR
A
B
C
D
2001
2002
2003
2004
2005
1996
1997
1998
1999
2000
A
B
C
D
E
F
G
H
X
Y
J
K
Y
9
8
7
6
PART NUMBER
TOP
WEEK
WEEK
2A = IRLMS1902
2B = IRLMS1503
2C = IRLMS6702
2D = IRLMS5703
2E = IRLMS6802
2F = IRLMS4502
PART NUMBER CODE REFERENCE:
2G = IRLMS2002
2H = IRLMS6803
DATE
CODE
DATE CODE EXAMPLES:
YWW = 9603 = 6C
YWW = 9632 = FF
WAFER LOT
NUMBER CODE
BOTTOM
EXAMPLE: THIS IS AN IRLMS6702
Notes: This part marking information applies to devices produced before 02/26/2001
Notes: This part marking information applies to devices produced after 02/26/2001
2000
1998
1999
1997
1996
2005
2000
1999
1998
1997
1996
2005
2004
2003
2002
2001
YEAR
W = (27-52) IF PRECEDED BY A LETTER
2004
2003
2002
2001
YEAR
W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR
PART NUMBER
TOP
LOT
CODE
W = WEEK
Y = YEAR
PART NUMBER CODE REFERENCE:
G = IRLMS2002
H = IRLMS6803
E = IRLMS6802
F = IRLMS4502
D = IRLMS5703
C = IRLMS6702
B = IRLMS1503
A = IRLMS1902
7
8
WORK
2
3
4
02
03
04
Y
1
01
5
6
B
C
D
W
A
0
9
24
25
26
X
Y
Z
B
C
B
C
28
29
WORK
Y
A
27
W
A
H
J
E
F
G
D
30
K
50
51
52
D
X
Y
Z
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRLMS6802PBF | 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFET Power MOSFET |
| IRLMS6802TR | 功能描述:MOSFET P-CH 20V 5.6A 6-TSOP RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRLMS6802TRHR | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 20V 5.6A 6-Pin Micro T/R 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 20V 5.6A 6PIN MICRO6 - Tape and Reel |
| IRLMS6802TRPBF | 功能描述:MOSFET MOSFT P-Ch -5.6A 50mOhm 11nC Log Lvl RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRLMS6802TRPBF | 制造商:International Rectifier 功能描述:MOSFET Transistor Power Dissipation:2.0W |
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