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参数资料
| 型号： | IRLML6402TR |
| 厂商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件页数： | 1/8页 |
| 文件大小： | 81K |
| 代理商： | IRLML6402TR |
Parameter
Typ.
75
Max.
100
Units
°C/W
R
θ
JA
Maximum Junction-to-Ambient
IRLML6402
HEXFET
Power MOSFET
These P-Channel MOSFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET
power MOSFETs are well known for, provides the designer with
an extremely efficient and reliable device for use in battery and
load management.
A thermally enhanced large pad leadframe has been incorporated
into the standard SOT-23 package to produce a HEXFET Power
MOSFET with the industry's smallest footprint. This package,
dubbed the Micro3
, is ideal for applications where printed
circuit board space is at a premium. The low profile (<1.1mm)
of the Micro3 allows it to fit easily into extremely thin application
environments such as portable electronics and PCMCIA cards.
The thermal resistance and power dissipation are the best
available.
Absolute Maximum Ratings
Thermal Resistance
V
DSS
= -20V
R
DS(on)
= 0.065
l
Ultra Low On-Resistance
l
P-Channel MOSFET
l
SOT-23 Footprint
l
Low Profile (<1.1mm)
l
Available in Tape and Reel
l
Fast Switching
Description
8/13/99
www.irf.com
1
S
D
G
PD- 93755
Parameter
Max.
-20
-3.7
-2.2
-22
1.3
0.8
0.01
11
± 12
Units
V
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
Drain- Source Voltage
Continuous Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Gate-to-Source Voltage
Junction and Storage Temperature Range
A
W/°C
mJ
V
°C
E
AS
V
GS
T
J,
T
STG
-55 to + 150
W
Micro3
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRLML6402TRPBF | 功能描述:MOSFET MOSFT P-Ch -3.7A 65mOhm 8nC Log Lvl RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRLML6402TRPBF | 制造商:International Rectifier 功能描述:MOSFET |
| IRLML6402TRPBF-CUT TAPE | 制造商:IR 功能描述:Single P-Channel 20 V 1.3 W 8 nC Hexfet Power Mosfet Surface Mount - MICRO-3 |
| IRLML9301TRPBF | 功能描述:MOSFET MOSFT P-Ch -30V -3.6A 64mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRLML9301TRPBF | 制造商:International Rectifier 功能描述:P CHANNEL MOSFET -30V -3.6 A SOT-23 制造商:International Rectifier 功能描述:P CHANNEL, MOSFET, -30V, -3.6 A, SOT-23 |
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